中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods

文献类型:期刊论文

作者Zhou, Yuan;   Zhao, Youwen;   Shen, Guiying;   Xie, Hui;   Liu, Jingming;   Yang, Jun;   Liu, Lijie
刊名MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
出版日期2021
卷号121页码:105460
源URL[http://ir.semi.ac.cn/handle/172111/31519]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Zhou, Yuan; Zhao, Youwen; Shen, Guiying; Xie, Hui; Liu, Jingming; Yang, Jun; Liu, Lijie. Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2021,121:105460.
APA Zhou, Yuan; Zhao, Youwen; Shen, Guiying; Xie, Hui; Liu, Jingming; Yang, Jun; Liu, Lijie.(2021).Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,121,105460.
MLA Zhou, Yuan; Zhao, Youwen; Shen, Guiying; Xie, Hui; Liu, Jingming; Yang, Jun; Liu, Lijie."Evaluation of residual stress in InP and InAs (100) substrates obtained from single crystals grown by LEC and VGF methods".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 121(2021):105460.

入库方式: OAI收割

来源:半导体研究所

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