Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic
文献类型：期刊论文
| 作者 | Qiu, Chen; Cao, Ruyue; Wang, Fei; Deng, Hui-Xiong |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2021 |
| 卷号 | 118期号:8页码:83102 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31492]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Qiu, Chen; Cao, Ruyue; Wang, Fei; Deng, Hui-Xiong. Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic[J]. APPLIED PHYSICS LETTERS,2021,118(8):83102. |
| APA | Qiu, Chen; Cao, Ruyue; Wang, Fei; Deng, Hui-Xiong.(2021).Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic.APPLIED PHYSICS LETTERS,118(8),83102. |
| MLA | Qiu, Chen; Cao, Ruyue; Wang, Fei; Deng, Hui-Xiong."Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic".APPLIED PHYSICS LETTERS 118.8(2021):83102. |
入库方式： OAI收割
来源：半导体研究所
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