Electronic structures and band alignment transition in double-wall MoS2/WS2 nanotubes for optoelectronic applications
文献类型：期刊论文
| 作者 | Guo, Dan; Yang, Kaike; Zhang, Cai-Xin; Shen, Tao; Deng, Hui-Xiong |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 54期号:9页码:95105 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/31469]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Guo, Dan; Yang, Kaike; Zhang, Cai-Xin; Shen, Tao; Deng, Hui-Xiong. Electronic structures and band alignment transition in double-wall MoS2/WS2 nanotubes for optoelectronic applications[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(9):95105. |
| APA | Guo, Dan; Yang, Kaike; Zhang, Cai-Xin; Shen, Tao; Deng, Hui-Xiong.(2021).Electronic structures and band alignment transition in double-wall MoS2/WS2 nanotubes for optoelectronic applications.JOURNAL OF PHYSICS D-APPLIED PHYSICS,54(9),95105. |
| MLA | Guo, Dan; Yang, Kaike; Zhang, Cai-Xin; Shen, Tao; Deng, Hui-Xiong."Electronic structures and band alignment transition in double-wall MoS2/WS2 nanotubes for optoelectronic applications".JOURNAL OF PHYSICS D-APPLIED PHYSICS 54.9(2021):95105. |
入库方式： OAI收割
来源：半导体研究所
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