The study on two different design and fabrication of visible light photodetection based on In2Se3-WS2 heterojunction
文献类型：期刊论文
| 作者 | Sheng, Qidi2,3; Gu, Qigang3; Li, Shubing1; Wang, Qiangfei1; Zhou, Xuan3; Lv, Bin3; Cheng, Guofeng2; Yan, Bo3; Deng, Juan3; Gao, Fan3 |
| 刊名 | OPTICAL MATERIALS
 |
| 出版日期 | 2024-03-01 |
| 卷号 | 149页码:10 |
| 关键词 | Two-dimensional semiconductor materials Transition metal dichaldogenides(TMDs) In2Se3 Photoelec-tric detection Heterojunctions |
| ISSN号 | 0925-3467 |
| DOI | 10.1016/j.optmat.2024.115052 |
| 通讯作者 | Lv, Bin(binlv@zjut.edu.cn) ; Cheng, Guofeng(gfcheng@mail.sic.ac.cn) ; Yan, Bo(boyan@zjut.edu.cn) |
| 英文摘要 | Since the discovery of graphene, extensive research has been conducted on two-dimensional (2D) materials with similar structures due to their exceptional photoelectric properties. Transition metal disulfide compounds (TMDCs) have emerged as promising candidates for photodetector applications owing to their remarkable physical characteristics. This study investigates the photoelectric properties of heterojunctions made of WS2 and In2Se3, which are 2D materials of significant interest. The heterojunctions are prepared using a dry transfer technique, and device electrodes are etched using the e-beam lithography (EBL) method. Through photoelectric performance testing, it is found that the carrier mobility of In2Se3/WS2 Field Effect Transistors (FET) is 6.89 square cm2/(V & sdot;s). The photoelectric properties of the devices are evaluated at three different wavelengths: 405 nm, 520 nm, and 638 nm. The corresponding optical responsivity values are measured as 6.35A/W, 2.39A/W, and 0.25A/W respectively while the optical response times are determined as 112.6 ms, 49.9 ms, and 71.8 ms for each wavelength respectively. The In2Se3/WS2 heterojunctions show a better performance than WS2/Si devices. This work reveals the potential application of In2Se3/WS2 heterojunctions in high-performance photodetection within the visible light range. |
| WOS关键词 | MOS2 ; WS2 |
| 资助项目 | Shanghai Technical Platform for Testing on Inorganic Materials[19DZ2290700] ; Shanghai Science and Technology Innovation Project[20DZ2205600] ; Shanghai Science and Technology Innovation Project[22142201300] ; National Natural Science Foundation of China[12104402] ; Commonweal project of Zhejiang Province[LGC22F050004] ; Zhejiang Provincial Natural Science Foundation of China[LZ24D050002] ; Natural Science Foundation of Zhejiang Province[LY22A040003] |
| WOS研究方向 | Materials Science ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:001208505700001 |
| 出版者 | ELSEVIER |
| 源URL | [http://119.78.100.183/handle/2S10ELR8/310962]  |
| 专题 | 中国科学院上海药物研究所 |
| 通讯作者 | Lv, Bin; Cheng, Guofeng; Yan, Bo |
| 作者单位 | 1.East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, Anal & Testing Ctr Inorgan Mat, Shanghai 200050, Peoples R China 3.Zhejiang Univ Technol, Coll Sci, 288 Liuhe Rd, Hangzhou 310023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sheng, Qidi,Gu, Qigang,Li, Shubing,et al. The study on two different design and fabrication of visible light photodetection based on In2Se3-WS2 heterojunction[J]. OPTICAL MATERIALS,2024,149:10. |
| APA | Sheng, Qidi.,Gu, Qigang.,Li, Shubing.,Wang, Qiangfei.,Zhou, Xuan.,...&Gao, Fan.(2024).The study on two different design and fabrication of visible light photodetection based on In2Se3-WS2 heterojunction.OPTICAL MATERIALS,149,10. |
| MLA | Sheng, Qidi,et al."The study on two different design and fabrication of visible light photodetection based on In2Se3-WS2 heterojunction".OPTICAL MATERIALS 149(2024):10. |
入库方式： OAI收割
来源：上海药物研究所
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