Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs
文献类型：期刊论文
| 作者 | A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Y. Han, S. C. Tian and D. Bimberg |
| 刊名 | Photonics
 |
| 出版日期 | 2023 |
| 卷号 | 10期号:6页码:15 |
| DOI | 10.3390/photonics10060660 |
| 英文摘要 | A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed performance of the lasers with L-type device topology (with the largest double-mesa sizes) is mainly limited by electrical parasitics showing noticeable damping of the relaxation oscillations. For the S-type device topology (with the smallest double-mesa sizes), the decrease in the parasitic capacitance of the reverse-biased p(+)n-junction region outside the buried tunnel junction region allowed to raise the parasitic cutoff frequency up to 13-14 GHz. The key mechanism limiting the high-speed performance of such devices is thus the damping of the relaxation oscillations. VCSELs with S-type device topology demonstrate more than 13 GHz modulation bandwidth and up to 37 Gbps nonreturn-to-zero data transmission under back-to-back conditions at 20 & DEG;C. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67330]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Y. Han, S. C. Tian and D. Bimberg. Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs[J]. Photonics,2023,10(6):15. |
| APA | A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Y. Han, S. C. Tian and D. Bimberg.(2023).Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs.Photonics,10(6),15. |
| MLA | A. Babichev, S. Blokhin, A. Gladyshev, L. Karachinsky, I. Novikov, A. Blokhin, M. Bobrov, Y. Kovach, A. Kuzmenkov, V. Nevedomsky, N. Maleev, E. Kolodeznyi, K. Voropaev, A. Vasilyev, V. Ustinov, A. Egorov, S. Y. Han, S. C. Tian and D. Bimberg."Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs".Photonics 10.6(2023):15. |
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