Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang |
| 刊名 | Materials Science in Semiconductor Processing
 |
| 出版日期 | 2024 |
| 卷号 | 169页码:7 |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2023.107912 |
| 英文摘要 | Monoclinic gallium oxide (B-Ga2O3) has attracted wide attention due to its low-cost single crystal and excellent optoelectronic properties. However, the low specific surface area and high defect density of B-Ga2O3 thin films result in weak light-matter interaction and poor crystal quality, seriously hindering their applications. In this article, the growth of high light-trapping B-Ga2O3 nanorod (NR) film on GaAs substrates by metal-organic chemical vapor deposition (MOCVD) is demonstrated. The GaAs substrates were pre-treated by thermal oxidation (TO) to produce a B-Ga2O3 seed layer. The effect of MOCVD growth conditions on the morphology of B-Ga2O3 NR films is investigated. The growth mechanism of B-Ga2O3 NR films is studied in detail. X-ray diffraction, Raman, and photoluminescence were employed to study the crystal and optical properties of B-Ga2O3 NR films. A significant light-trapping effect with a 40 % reduction in optical reflectance at the wavelength of 254 nm is observed. The results show that the B-Ga2O3 NR films exhibit strong light-matter interaction and have potential in optoelectronic applications. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67378]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang. Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition[J]. Materials Science in Semiconductor Processing,2024,169:7. |
| APA | W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang.(2024).Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition.Materials Science in Semiconductor Processing,169,7. |
| MLA | W. Chen, T. Jiao, P. R. Chen, X. M. Dang, Y. Han, H. Yu, X. Dong, Y. T. Zhang and B. L. Zhang."Preparation of high light-trapping B-Ga2O3 nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition".Materials Science in Semiconductor Processing 169(2024):7. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。