中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Analysis of size-dependent optoelectronic properties of red AlGaInP micro-LEDs

文献类型:期刊论文

作者K. Fan; K. Zheng; J. Lv; B. Zhao; Y. Zhao; Y. Chen; Y. Qin; Q. Wang; W. Wang and J. Liang
刊名Optics Express
出版日期2023
卷号31期号:22页码:36293-36303
ISSN号10944087
DOI10.1364/OE.503024
英文摘要We have theoretically investigated the size-dependent optoelectronic properties of InGaP/AlGaInP-based red micro-LEDs through an electro-optical-thermal coupling model. The model considers thermal effects due to current crowding near the electrodes, non-thermal efficiency droop due to electron leakage, and etch defects on the LED sidewall. Sidewall defects reduce the carrier concentration at the light-emitting surface’s edge and exacerbate the current crowding effect. In addition, p-side electron leakage at high current densities is the leading cause of the efficiency droop of AlGaInP LEDs. In contrast, the effect of temperature on the overall efficiency degradation of LEDs is even more significant. © 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.
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源URL[http://ir.ciomp.ac.cn/handle/181722/67451]  
专题中国科学院长春光学精密机械与物理研究所
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GB/T 7714
K. Fan,K. Zheng,J. Lv,et al. Analysis of size-dependent optoelectronic properties of red AlGaInP micro-LEDs[J]. Optics Express,2023,31(22):36293-36303.
APA K. Fan.,K. Zheng.,J. Lv.,B. Zhao.,Y. Zhao.,...&W. Wang and J. Liang.(2023).Analysis of size-dependent optoelectronic properties of red AlGaInP micro-LEDs.Optics Express,31(22),36293-36303.
MLA K. Fan,et al."Analysis of size-dependent optoelectronic properties of red AlGaInP micro-LEDs".Optics Express 31.22(2023):36293-36303.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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