High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution
文献类型：期刊论文
| 作者 | Y. H. Li; M. Q. Che; N. Zhang; Y. T. Zou; X. Y. Zhao; Y. C. Lin; B. C. Lv; X. B. Ma; Y. R. Shi; J. J. Yang |
| 刊名 | Advanced Optical Materials
 |
| 出版日期 | 2023 |
| 页码 | 8 |
| ISSN号 | 2195-1071 |
| DOI | 10.1002/adom.202302339 |
| 英文摘要 | Band alignment engineering in 2D van der Waals heterostructures is a promising method for manufacturing high-speed, high-responsivity, and high-gain photodetectors. Here, a heterojunction photodetector with the band alignment transition from type I to type II under the bias voltage using narrow bandgap material n-Bi2Se3 and polarization-sensitive material p-GeSe is designed and prepared. This photodetector possesses excellent performance of broadband detection (532-1550 nm), high responsivity (5.86 x 10(3) A W-1), high detectivity (1.50 x 10(13) Jones), significant external quantum efficiency (1.15 x 10(6)%) and fast response time (97 mu s). Compared with the conventional type II band alignment, an additional triangular potential barrier is generated in this type II band alignment evolved from type I. Notably, this triangular barrier will block photogenerated carriers in Bi2Se3, which leads to high external quantum efficiency; Furthermore, photogenerated holes can tunnel through this barrier, effectively shortening the response time. Meanwhile, the device can achieve polarization detection (anisotropic ratio = 1.74 at 808 nm) and polarization imaging, which is of great significance for reducing the bit error rate in complex environments. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67658]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Y. H. Li,M. Q. Che,N. Zhang,et al. High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution[J]. Advanced Optical Materials,2023:8. |
| APA | Y. H. Li.,M. Q. Che.,N. Zhang.,Y. T. Zou.,X. Y. Zhao.,...&S. J. Li and D. B. Li.(2023).High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution.Advanced Optical Materials,8. |
| MLA | Y. H. Li,et al."High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution".Advanced Optical Materials (2023):8. |
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