Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction
文献类型：期刊论文
| 作者 | M. Liu; M. Jiang; Q. Zhao; K. Tang; S. Sha; B. Li; C. Kan and D. N. Shi |
| 刊名 | ACS Applied Materials and Interfaces
 |
| 出版日期 | 2023 |
| 卷号 | 15期号:10页码:13258-13269 |
| ISSN号 | 19448244 |
| DOI | 10.1021/acsami.2c19806 |
| 英文摘要 | Low-dimensional ZnO, possessing well-defined side facets and optical gain properties, has emerged as a promising material to develop ultraviolet coherent light sources. However, the realization of electrically driven ZnO homojunction luminescence and laser devices is still a challenge due to the absence of a reliable p-type ZnO. Herein, the sample of p-type ZnO microwires doped by Sb (ZnO:Sb MWs) was synthesized individually. Subsequently, the p-type conductivity was examined using a single-MW field-effect transistor. Upon optical pumping, a ZnO:Sb MW showing a regular hexagonal cross-section and smooth sidewall facets can feature as an optical microcavity, which is evidenced by the achievement of whispering-gallery-mode lasing. By combining an n-type ZnO layer, a single ZnO:Sb MW homojunction light-emitting diode (LED), which exhibited a typical ultraviolet emission at a wavelength of 379.0 nm and a line-width of approximately 23.5 nm, was constructed. We further illustrated that strong exciton-photon coupling can occur in the as-constructed p-ZnO:Sb MW/n-ZnO homojunction LED by researching spatially resolved electroluminescence spectra, contributing to the exciton-polariton effect. Particularly, varying the cross-sectional dimensions of ZnO:Sb wires can further modulate the exciton-photon coupling strengths. We anticipate that the results can provide an effective exemplification to realize reliable p-type ZnO and tremendously promote the development of low-dimensional ZnO homojunction optoelectronic devices. © 2023 American Chemical Society |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67701]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | M. Liu,M. Jiang,Q. Zhao,et al. Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction[J]. ACS Applied Materials and Interfaces,2023,15(10):13258-13269. |
| APA | M. Liu.,M. Jiang.,Q. Zhao.,K. Tang.,S. Sha.,...&C. Kan and D. N. Shi.(2023).Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction.ACS Applied Materials and Interfaces,15(10),13258-13269. |
| MLA | M. Liu,et al."Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction".ACS Applied Materials and Interfaces 15.10(2023):13258-13269. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。