AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics
文献类型：期刊论文
| 作者 | M. Liu; S. Lu; Y. Jia; H. Zang; K. Jiang; X. Sun and D. Li |
| 出版日期 | 2023 |
| 页码 | 1-1 |
| ISSN号 | 07413106 |
| DOI | 10.1109/LED.2023.3347233 |
| 英文摘要 | AlScN-based memristors show high potential of non-volatile storage and neuromorphic computing. Here, we report an AlScN/n-GaN heterostructure memristor with a large ON/OFF ratio over 105 attributed to the coexistence of heterointerface energy band modulation and trap-assisted conduction mechanisms. Unlike typical ferroelectric memristors, the device presents obvious reproducible bipolar resistive switching characteristics without polarization flipping due to the extra trap-assisted conductive path, which effectively reduces energy consumption. Remarkably, multi-level ON/OFF ratios and reversible bipolar resistive switching characteristics can be achieved by regulating the magnitude and direction of ferroelectric polarization, indicating that different operating modes can be achieved on a single device, which shows promise for improving device integration density and information security. These findings help elucidate the resistive switching mechanism and the effect of ferroelectric polarization on device properties, which pave the way for applications of power-efficient CMOS-compatible nitride memristors. IEEE |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67702]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | M. Liu,S. Lu,Y. Jia,et al. AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics[J],2023:1-1. |
| APA | M. Liu,S. Lu,Y. Jia,H. Zang,K. Jiang,&X. Sun and D. Li.(2023).AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics.,1-1. |
| MLA | M. Liu,et al."AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics".(2023):1-1. |
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