中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Narrow versus Broad Waveguide Laser Diodes: A Comparative Analysis of Self-Heating and Reliability

文献类型:会议论文

作者Demir, Abdullah4; Sünnetçioğlu, Ali Kaan4; Ebadi, Kaveh4; Liu, Yuxian2,3; Tang, Song1; Yang, Guowen1,2,3
出版日期2024
会议日期2024-01-28
会议地点San Francisco, CA, United states
关键词Semiconductor laser laser diode high power reliability catastrophic optical damage
卷号12867
DOI10.1117/12.3002971
英文摘要Semiconductor laser diodes (LDs) generate high output powers with high power conversion efficiencies. While broad-area LDs are favored for high-power applications, narrow-waveguide LDs are in demand for their single-mode characteristics. However, LDs suffer from device failures caused by catastrophic optical damage (COD) due to elevated self-heating at high operating currents. It is critical to understand the COD mechanism in these devices to enhance their reliability and operating output power. In this study, we investigated the self-heating and temperature characteristics of LDs with varying waveguide widths to uncover the cause of their failure mechanism. We assessed the performance, junction, and facet temperatures of the narrow (W=7 µm) and broad waveguide (W=100 µm) LDs. The narrower waveguide LDs achieved and operated at higher output power densities but, surprisingly, maintained lower junction and facet temperatures. Additionally, we employed a thermal simulation model to analyze heat transport characteristics versus LD waveguide widths. The simulation results showed that narrower waveguide LDs exhibit improved three-dimensional heat dissipation, resulting in reduced junction and facet temperatures and, thus, enhanced reliability. Our simulations align well with the experimental data. The findings demonstrate a transition in heat dissipation characteristics from broad to narrow waveguide behavior at approximately 50 µm width. These results clarify the fundamental reasons behind the superior reliability of narrower waveguide LDs and provide valuable guidance for LD thermal management. © 2024 SPIE.
产权排序2
会议录High-Power Diode Laser Technology XXII
会议录出版者SPIE
语种英语
ISSN号0277786X;1996756X
ISBN号9781510669932
源URL[http://ir.opt.ac.cn/handle/181661/97422]  
专题西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位1.Dogain Laser Technology (Suzhou) Co., Ltd., Suzhou; 215123, China
2.University of Chinese Academy of Sciences, Beijing; 100049, China;
3.State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an; 710119, China;
4.Bilkent University, UNAM - Institute of Materials Science and Nanotechnology, Ankara; 06800, Turkey;
推荐引用方式
GB/T 7714
Demir, Abdullah,Sünnetçioğlu, Ali Kaan,Ebadi, Kaveh,et al. Narrow versus Broad Waveguide Laser Diodes: A Comparative Analysis of Self-Heating and Reliability[C]. 见:. San Francisco, CA, United states. 2024-01-28.

入库方式: OAI收割

来源:西安光学精密机械研究所

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