Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing
文献类型：期刊论文
| 作者 | X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen |
| 刊名 | Journal of Materials Chemistry C
 |
| 出版日期 | 2023 |
| 卷号 | 11期号:9页码:3227-3234 |
| ISSN号 | 2050-7526 |
| DOI | 10.1039/d2tc05204k |
| 英文摘要 | Pure and similar to 7.5 at% Zn alloyed beta-Ga2O3 epitaxial films were epitaxially grown by metal organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by 600 degrees C annealing in an oxygen atmosphere. We have characterized the structural, optical and electrical properties of the four prepared samples including as-grown pure beta-Ga2O3, annealed pure beta-Ga2O3, as-grown beta-Ga2O3:Zn and annealed beta-Ga2O3:Zn films in detail. Furthermore, solar-blind UV photodetectors with metal-semiconductor-metal structures fabricated from these epitaxial thin films have been demonstrated. A giant performance enhancement can be observed for beta-Ga2O3 photodetectors by Zn alloying and subsequent oxygen annealing. The device fabricated from the annealed beta-Ga2O3:Zn film shows a low dark current of similar to 3.7 x 10(-11) A, a high responsivity of 2.8 x 10(3) A W-1 and a high UV-vis rejection ratio of 5.6 x 10(5) at 10 V bias. And an ultra-high specific detectivity up to 5.9 x 10(16) cm Hz(1/2) W-1 (Jones) is observed. Such excellent photodetection performance of annealed Ga2O3:Zn devices can be explained by the donor compensation effect and the deep level trap removal effect by the introduction of Zn. Our findings contribute a roadmap for realizing high-performance Ga2O3-based solar-blind photodetectors, and provide a sturdy foundation for future applications. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67870]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen. Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing[J]. Journal of Materials Chemistry C,2023,11(9):3227-3234. |
| APA | X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen.(2023).Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing.Journal of Materials Chemistry C,11(9),3227-3234. |
| MLA | X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen."Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing".Journal of Materials Chemistry C 11.9(2023):3227-3234. |
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