Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process
文献类型：期刊论文
| 作者 | Q. Wang, D. Lei, J. Huang, X. Sun, D. Li, Z. Zhou and W. L |
| 刊名 | Frontiers in Materials
 |
| 出版日期 | 2023 |
| 卷号 | 9 |
| ISSN号 | 22968016 |
| DOI | 10.3389/fmats.2022.1128468 |
| 英文摘要 | Single crystalline aluminum nitride (sc-AlN or AlN) boules with a diameter of 3-inch (Φ76 mm) were successfully prepared by the physical vapor transport (PVT) process. The initial homoepitaxial growth run was performed on an aluminum nitride seed sliced from a Φ51 mm aluminum nitride boule, and diameter enlargement was conducted iteratively via the lateral expansion technique until a Φ76 mm boule was achieved. During the diameter expansion growth runs, the crystal shape transitioned from a hexagonal pyramid to a cylindrical pyramid. After the standard slicing and wafering processes, the as-obtained substrates were characterized by high-resolution X-ray diffraction (HRXRD), preferential chemical etching, and optical spectroscopy. The characterization results revealed that the aluminum nitride substrates showed good crystallinity and excellent UV transparency, although a slight quality deterioration was observed when the crystal size was expanded from Φ51 to Φ76 mm, while the deep-UV (DUV) transparency remained very similar to that of the aluminum nitride seeds. The Φ76 mm aluminum nitride boules obtained in this study are an important milestone towards achieving Φ100 mm (4-inch) aluminum nitride, which are essential for the rapid commercialization of deep-UV optoelectronics and ultra-wide bandgap (UWBG) electronics. Copyright © 2023 Wang, Lei, Huang, Sun, Li, Zhou and Wu. |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/67952]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Q. Wang, D. Lei, J. Huang, X. Sun, D. Li, Z. Zhou and W. L. Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process[J]. Frontiers in Materials,2023,9. |
| APA | Q. Wang, D. Lei, J. Huang, X. Sun, D. Li, Z. Zhou and W. L.(2023).Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process.Frontiers in Materials,9. |
| MLA | Q. Wang, D. Lei, J. Huang, X. Sun, D. Li, Z. Zhou and W. L."Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process".Frontiers in Materials 9(2023). |
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