GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity
文献类型：期刊论文
| 作者 | Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li |
| 刊名 | Ieee Transactions on Electron Devices
 |
| 出版日期 | 2023 |
| 页码 | 6 |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/ted.2023.3310944 |
| 英文摘要 | In this report, a polarization-doped n-p-i-p-n GaN/AlxGa1-xN/GaN ultraviolet phototransistor with an Al0.20Ga0.80N insertion layer is proposed. The AlxGa1-xN layer with graded AlN composition is utilized as a p-type layer. The Al0.20Ga0.80N insertion layer is embedded into the unintentionally doped GaN (i-GaN) absorption layer, which can increase the conduction band barrier height and reduce the electron leakage from the substrate for the device. As a result, the dark current lower than 3.40 x 10(-11) A/cm(2) can be obtained. When the device is illuminated with ultraviolet light, the forward biased junction facilitates the photo-generated carrier transport. As a result, a photo-to-dark-current ratio (PDCR) larger than 10(4) at the applied bias of 5 V is realized. The carriers are transported in the region far apart from the device surface, and this gives rise a response with the rise time of 27 ms and decay time of 44 ms, respectively. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/68069]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li. GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity[J]. Ieee Transactions on Electron Devices,2023:6. |
| APA | Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li.(2023).GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity.Ieee Transactions on Electron Devices,6. |
| MLA | Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li."GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity".Ieee Transactions on Electron Devices (2023):6. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。