中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dislocations and a domains coupling in PbTiO3 thin films

文献类型:期刊论文

作者Cheng, Long3; Zhang, Heng1,5; Xu, Ran3; Co, Kevin3; Guiblin, Nicolas3; Otonicar, Mojca2,4; Paillard, Charles3,6; Wang, Yujia5; Dkhil, Brahim3
刊名APPLIED PHYSICS LETTERS
出版日期2023-11-13
卷号123期号:20页码:5
ISSN号0003-6951
DOI10.1063/5.0173901
通讯作者Cheng, Long(long.cheng@centralesupelec.fr)
英文摘要The interaction of domain structure and defects in ferroelectric thin films has been studied for decades. However, the role of dislocations and thermal stability of microstructures is still poorly studied. By combining transmission electron microscopy, x-ray diffraction experiments, and phase-field simulations, we show that dislocation pairs induced by post-annealing above 550 degrees C provide a stress field stabilizing a domains in 30 nm thick tetragonal PbTiO3 films on SrTiO3 substrate, initially exhibiting pure c domains. Based on phase-field simulations, we further discuss the effects of single dislocations and dislocation pairs on the nucleation of a-domains and the occurrence of non-ferroelastic 180 degrees domains. Dislocations, and the possibility to tune them using an appropriate thermal annealing process, offer a path for modulating the domains and domain wall states and, thus, the physical properties of ferroelectric films.
资助项目The authors are grateful for the support from Professor X. L. Ma (now at Songshan Lake Materials Laboratory), Professor Y. L. Tang at Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, and Y. P. Fen ; China Scholarship Council[ANR-21-CE42-0030] ; China Scholarship Council[ANR-21-CE09-0033-02] ; China Scholarship Council[ANR-21-CE24-0032] ; Agence Nationale de la Recherche (ANR) through THz-MUFINS[BI-FR/21-22-PROTEUS-004] ; PHC Slovenian-French Proteus mobility[P2-0105] ; PHC Slovenian-French Proteus mobility[J2-2508] ; Slovenian Research Agency ARRS[52122101] ; National Natural Science Foundation of China[L2019F13] ; Shenyang National Laboratory for Materials Science[2021187] ; Youth Innovation Promotion Association CAS
WOS研究方向Physics
语种英语
WOS记录号WOS:001104505100003
出版者AIP Publishing
资助机构The authors are grateful for the support from Professor X. L. Ma (now at Songshan Lake Materials Laboratory), Professor Y. L. Tang at Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, and Y. P. Fen ; China Scholarship Council ; Agence Nationale de la Recherche (ANR) through THz-MUFINS ; PHC Slovenian-French Proteus mobility ; Slovenian Research Agency ARRS ; National Natural Science Foundation of China ; Shenyang National Laboratory for Materials Science ; Youth Innovation Promotion Association CAS
源URL[http://ir.imr.ac.cn/handle/321006/177364]  
专题金属研究所_中国科学院金属研究所
通讯作者Cheng, Long
作者单位1.Univ Sci & Technol China, Sch Mat Sci & Engn, Wenhua Rd 72, Shenyang 110016, Peoples R China
2.Jozef Stefan Inst, Jamova 39, Ljubljana 1000, Slovenia
3.Univ Paris Saclay, CentraleSupelec, CNRS, Lab SPMS, F-91190 Gif Sur Yvette, France
4.Jozef Stefan Postgrad Sch, Jamova 39, Ljubljana 1000, Slovenia
5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China
6.Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USA
推荐引用方式
GB/T 7714
Cheng, Long,Zhang, Heng,Xu, Ran,et al. Dislocations and a domains coupling in PbTiO3 thin films[J]. APPLIED PHYSICS LETTERS,2023,123(20):5.
APA Cheng, Long.,Zhang, Heng.,Xu, Ran.,Co, Kevin.,Guiblin, Nicolas.,...&Dkhil, Brahim.(2023).Dislocations and a domains coupling in PbTiO3 thin films.APPLIED PHYSICS LETTERS,123(20),5.
MLA Cheng, Long,et al."Dislocations and a domains coupling in PbTiO3 thin films".APPLIED PHYSICS LETTERS 123.20(2023):5.

入库方式: OAI收割

来源:金属研究所

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