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Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era

文献类型：期刊论文

作者Wang, Xiaoyue1,3; Liu, Chi1,3; Wei, Yuning1,3; Feng, Shun3; Sun, Dongming1,3; Cheng, Huiming2,3
刊名MATERIALS TODAY
出版日期2023-03-01
卷号63页码:170-187
关键词Field-effect transistors Three-dimensional integration Low-dimensional materials Carbon nanotubes post-Moore's law era
ISSN号1369-7021
DOI10.1016/j.mattod.2022.11.023
通讯作者Liu, Chi(chiliu@imr.ac.cn) ; Sun, Dongming(dmsun@imr.ac.cn)
英文摘要Since the 1960s, the feature size of metal oxide semiconductor field-effect transistors has been scaled down to sub-micrometer and even nanometer to increase the transistor density on a chip according to the Moore's law, leading to smaller device, faster speed and lower power consumption. In this process, various new materials and technologies have been introduced including SiGe strained silicon and high -k metal gate. Today, tremendous efforts are being made for the use of three-dimensional (3D) technologies such as fin-structured field-effect transistors, gate-all-around field-effect transistors and 3D integration. At the same time, low-dimensional materials such as carbon nanotubes, graphene and transition metal dichalcogenides are being extensively studied for nano-device fabrication. Here, the development of devices using both 3D structures and low-dimensional materials is reviewed. By combining these two key strategies, 3D transistors and integration based on low-dimensional materials are expected to achieve the highest gate control ability and device density, which is promising to continue the Moore's law even further.
资助项目National Natural Science Foundation of China[62074150] ; National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[62125406] ; Chinese Academy of Sciences[SYNL2020] ; Chinese Academy of Sciences[SKLA-2019-03] ; Chinese Academy of Sciences[ZDBS-LY-JSC027] ; National Key Research and Development Program of China[2021YFA1200801]
WOS研究方向Materials Science
语种英语
WOS记录号WOS:000990662500001
出版者ELSEVIER SCI LTD
资助机构National Natural Science Foundation of China ; Chinese Academy of Sciences ; National Key Research and Development Program of China
源URL[http://ir.imr.ac.cn/handle/321006/177661]  
专题金属研究所_中国科学院金属研究所
通讯作者Liu, Chi; Sun, Dongming
作者单位1.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Chinese Acad Sci, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, 1068 Xueyuan Ave, Shenzhen 518055, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Xiaoyue,Liu, Chi,Wei, Yuning,et al. Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era[J]. MATERIALS TODAY,2023,63:170-187.
APA Wang, Xiaoyue,Liu, Chi,Wei, Yuning,Feng, Shun,Sun, Dongming,&Cheng, Huiming.(2023).Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era.MATERIALS TODAY,63,170-187.
MLA Wang, Xiaoyue,et al."Three-dimensional transistors and integration based on low-dimensional materials for the post-Moore's law era".MATERIALS TODAY 63(2023):170-187.

入库方式： OAI收割

来源：金属研究所

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