中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene

文献类型:期刊论文

作者Yang, Kaining6,7; Gao, Xiang6,7; Wang, Yaning8,9; Zhang, Tongyao6,7; Gao, Yuchen1,2,18; Lu, Xin10; Zhang, Shihao10; Liu, Jianpeng10,14; Gu, Pingfan1,2,18; Luo, Zhaoping8
刊名NATURE COMMUNICATIONS
出版日期2023-04-14
卷号14期号:1页码:10
DOI10.1038/s41467-023-37769-2
通讯作者Lu, Xin(lvxin@shanghaitech.edu.cn) ; Dai, Xi(daix@ust.hk) ; Chen, Jian-Hao(chenjianhao@pku.edu.cn) ; Ye, Yu(ye_yu@pku.edu.cn) ; Han, Zheng(vitto.han@gmail.com)
英文摘要Here, the authors report evidence of unconventional correlated insulating states in bilayer graphene/CrOCl heterostructures over wide doping ranges and demonstrate their application for the realization of low-temperature logic inverters. The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-G omega-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 10(7) by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron-electron (e-e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling.
资助项目National Key R&D Program of China[2019YFA0307800] ; National Key R&D Program of China[2017YFA0206301] ; National Key R&D Program of China[2018YFA0306900] ; National Key R&D Program of China[2019YFA0308402] ; National Key R&D Program of China[2018YFA0305604] ; National Natural Science Foundation of China (NSFC)[92265203] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[11934001] ; National Natural Science Foundation of China (NSFC)[11774010] ; National Natural Science Foundation of China (NSFC)[92265106] ; National Natural Science Foundation of China (NSFC)[11921005] ; Elemental Strategy Initiative ; MEXT, Japan[JPMXP0112101001] ; JSPS KAKENHI[JP20H00354] ; A3 Foresight by JSPS ; Beijing Municipal Natural Science Foundation[JQ20002]
WOS研究方向Science & Technology - Other Topics
语种英语
WOS记录号WOS:000969250300021
出版者NATURE PORTFOLIO
资助机构National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Elemental Strategy Initiative ; MEXT, Japan ; JSPS KAKENHI ; A3 Foresight by JSPS ; Beijing Municipal Natural Science Foundation
源URL[http://ir.imr.ac.cn/handle/321006/177695]  
专题金属研究所_中国科学院金属研究所
通讯作者Lu, Xin; Dai, Xi; Chen, Jian-Hao; Ye, Yu; Han, Zheng
作者单位1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing, Peoples R China
2.Peking Univ, Sch Phys, Frontiers Sci Ctr Nano Optoelect, Beijing, Peoples R China
3.Hefei Natl Lab, Hefei, Peoples R China
4.Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Japan
5.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing, Peoples R China
6.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China
7.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Peoples R China
8.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China
9.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Anhui, Peoples R China
10.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China
推荐引用方式
GB/T 7714
Yang, Kaining,Gao, Xiang,Wang, Yaning,et al. Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene[J]. NATURE COMMUNICATIONS,2023,14(1):10.
APA Yang, Kaining.,Gao, Xiang.,Wang, Yaning.,Zhang, Tongyao.,Gao, Yuchen.,...&Han, Zheng.(2023).Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene.NATURE COMMUNICATIONS,14(1),10.
MLA Yang, Kaining,et al."Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene".NATURE COMMUNICATIONS 14.1(2023):10.

入库方式: OAI收割

来源:金属研究所

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