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Effect of Cu/Ga interfacial reaction on heat transfer performance

文献类型：期刊论文

作者Du, Xinyu1,4; Wang, Wendong1,2; Ding, Zifeng4; Wang, Xiaojing4; Qiao, Yanxin4; Wei, Song3; Zhu, Qingsheng1,2; Guo, Jingdong1,2
刊名JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版日期2023-06-01
卷号34期号:17页码:10
ISSN号0957-4522
DOI10.1007/s10854-023-10782-3
通讯作者Guo, Jingdong(jdguo@imr.ac.cn)
英文摘要The interfacial reactions between Ga and Cu were studied under isothermal conditions at 70, 110, and 150 degrees C. The SEM morphology and XRD analysis revealed that only CuGa2 phases were formed at these temperatures. The growth of CuGa2 is described by the parabolic law, indicating that the body diffusion mechanism plays a dominant role in its growth. The activation energy of CuGa2 change was calculated as 14.25 kJ/mol. The effect of the intermetallic compounds (IMCs) growth on the heat transfer performance of gallium-based thermal interface materials (Ga-based TIMs) has been investigated. Thermal resistance test results show that the thermal resistance value rapidly decreases during the aging from 0 to 6 h and increases slowly in the subsequent aging process. These findings suggest that the thermal transfer performance of Ga-based TIM will not be significantly impacted by the formation and growth of CuGa2 at the interface.
资助项目National Natural Science Foundation of China[51971231] ; Guangxi Natural Science Foundation[2020GXNSFBA297109] ; Guangxi Science and Technology Program[GuikeAD20297023] ; Science and Technology Plan Project of Yunnan province[202101BC070001-007]
WOS研究方向Engineering ; Materials Science ; Physics
语种英语
WOS记录号WOS:001007922800003
出版者SPRINGER
资助机构National Natural Science Foundation of China ; Guangxi Natural Science Foundation ; Guangxi Science and Technology Program ; Science and Technology Plan Project of Yunnan province
源URL[http://ir.imr.ac.cn/handle/321006/178225]  
专题金属研究所_中国科学院金属研究所
通讯作者Guo, Jingdong
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Guilin 541004, Peoples R China
4.Jiangsu Univ Sci & Technol, Coll Mat Sci & Engn, Zhenjiang 212001, Peoples R China
推荐引用方式
GB/T 7714		 Du, Xinyu,Wang, Wendong,Ding, Zifeng,et al. Effect of Cu/Ga interfacial reaction on heat transfer performance[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2023,34(17):10.
APA Du, Xinyu.,Wang, Wendong.,Ding, Zifeng.,Wang, Xiaojing.,Qiao, Yanxin.,...&Guo, Jingdong.(2023).Effect of Cu/Ga interfacial reaction on heat transfer performance.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,34(17),10.
MLA Du, Xinyu,et al."Effect of Cu/Ga interfacial reaction on heat transfer performance".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 34.17(2023):10.

入库方式： OAI收割

来源：金属研究所

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