Revealing impurity evolution in silicon-doped diamond film via thermal oxidation
文献类型：期刊论文
| 作者 | Lu, Jiaqi1,3; Yang, Bing1,3; Li, Haining1,3; Guo, Xiaokun1,3; Huang, Nan1; Liu, Lusheng1; Jiang, Xin1,2 |
| 刊名 | CARBON
 |
| 出版日期 | 2023-01-25 |
| 卷号 | 203页码:337-346 |
| 关键词 | Diamond Color centers Impurity doping Thermal oxidation Microstructure |
| ISSN号 | 0008-6223 |
| DOI | 10.1016/j.carbon.2022.11.070 |
| 通讯作者 | Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn) |
| 英文摘要 | The incorporation of impurity atoms into diamonds has been an important issue for the application in the area of electronics, opto-electrics, and quantum optics with color centers. To date, it remains a challenge to explore the impurity distribution in diamond films owing to the low incorporation efficiency. In this work, Si-doped diamond films were deposited in microwave CVD system. Thermal oxidation was employed to selectively etch the nondiamond phase to study the impurity distribution and evolution. For micro-/nano-sized diamond films, the micro-sized grains remain intact, while the diamond nanocrystals are oxidized into porous oxides. The diamond needles exhibit strong silicon-vacancy center optical emission at 738 nm, implying that the Si atoms are incorporated into the lattice. Detailed microstructure characterizations reveal that the porous oxides are crystallized in amorphous state, consisting of silicon, oxygen, and carbon elements. Such abundance of Si in the amorphous porous oxides suggests that the Si atoms segregate at the grain boundaries. Therefore, this work provides a new path to reveal the impurity distribution along diamond crystalline defects. Moreover, the in-situ formed silicon oxide can act as an anti-reflection coating to enhance the optical emission of color centers, which is important for their optical applications. |
| 资助项目 | National Natural Science Foundation of China[52172056] ; National Natural Science Foundation of China[51872294] |
| WOS研究方向 | Chemistry ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001015402600001 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/178378]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Yang, Bing; Jiang, Xin |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany 3.Univ Sci & Technol China USTC, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, Jiaqi,Yang, Bing,Li, Haining,et al. Revealing impurity evolution in silicon-doped diamond film via thermal oxidation[J]. CARBON,2023,203:337-346. |
| APA | Lu, Jiaqi.,Yang, Bing.,Li, Haining.,Guo, Xiaokun.,Huang, Nan.,...&Jiang, Xin.(2023).Revealing impurity evolution in silicon-doped diamond film via thermal oxidation.CARBON,203,337-346. |
| MLA | Lu, Jiaqi,et al."Revealing impurity evolution in silicon-doped diamond film via thermal oxidation".CARBON 203(2023):337-346. |
入库方式： OAI收割
来源：金属研究所
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