Realization of chiral multifold semimetal RhSi crystalline thin films
文献类型：期刊论文
| 作者 | Lv, Hua1,2; Lesne, Edouard2; Ibarra, Rebeca2; Sun, Yan3; Markou, Anastasios2,4; Felser, Claudia2 |
| 刊名 | PHYSICAL REVIEW MATERIALS
 |
| 出版日期 | 2023-05-26 |
| 卷号 | 7期号:5页码:6 |
| ISSN号 | 2475-9953 |
| DOI | 10.1103/PhysRevMaterials.7.054201 |
| 通讯作者 | Lesne, Edouard(Edouard.Lesne@cpfs.mpg.de) ; Markou, Anastasios(Anastasios.Markou@cpfs.mpg.de) ; Felser, Claudia(Claudia.Felser@cpfs.mpg.de) |
| 英文摘要 | Nonmagnetic topological semimetals that combine chirality in real and momentum spaces host unconventional multifold fermions and exhibit exotic electronic and optical properties endowed by their topologically nontrivial electronic band structure. Although the synthesis of nonmagnetic chiral single crystals with a noncentrosym-metric cubic B20 structure is well established, their heteroepitaxial growth in crystalline thin films remains a notable challenge. In this study, we present the structural, magnetic, and electrical magnetotransport properties of 24-and 51-nm-thick films of a B20-RhSi stoichiometric compound grown by magnetron sputtering. RhSi crystalline thin films on Si (111) single-crystal substrates exhibit a preferred (111) orientation with twin domains. The RhSi films display a nonmagnetic ground state, and their electrical resistivity demonstrates a clear and nonsaturating metallic behavior from 300 to 5 K. Magnetotransport measurements reveal that hole-type carriers dominate the Hall response with multiband contributions to electronic transport in the system. The good agree-ment with the Bloch-Gruneisen model and our first-principles calculations confirms that temperature-dependent electrical resistivity is governed by electron-phonon scattering. The ability to grow textured-epitaxial thin films of nonmagnetic B20 chiral topological semimetals is an important step toward accessing and controlling their remarkable topological surface states for designing chiraltronic devices with novel optoelectronic or spintronic functionalities. |
| 资助项目 | Horizon 2020 FETPROAC[824123] ; Saechsische Aufbaubank-Foerderbank- (SAB)[4188] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001003883500003 |
| 出版者 | AMER PHYSICAL SOC |
| 资助机构 | Horizon 2020 FETPROAC ; Saechsische Aufbaubank-Foerderbank- (SAB) |
| 源URL | [http://ir.imr.ac.cn/handle/321006/178432]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Lesne, Edouard; Markou, Anastasios; Felser, Claudia |
| 作者单位 | 1.Leibniz Inst Forsch Verbund Berlin eV, Paul Drude Inst Festkorperelektron, Hausvogteipl 5-7, D-10117 Berlin, Germany 2.Max Planck Inst Chem Phys Solids, Nothnitzer Str 40, D-01187 Dresden, Germany 3.Chinese Acad Sci, Inst Met Res, Shenyang, Peoples R China 4.Univ Ioannina, Phys Dept, Ioannina 45110, Greece |
| 推荐引用方式 GB/T 7714 | Lv, Hua,Lesne, Edouard,Ibarra, Rebeca,et al. Realization of chiral multifold semimetal RhSi crystalline thin films[J]. PHYSICAL REVIEW MATERIALS,2023,7(5):6. |
| APA | Lv, Hua,Lesne, Edouard,Ibarra, Rebeca,Sun, Yan,Markou, Anastasios,&Felser, Claudia.(2023).Realization of chiral multifold semimetal RhSi crystalline thin films.PHYSICAL REVIEW MATERIALS,7(5),6. |
| MLA | Lv, Hua,et al."Realization of chiral multifold semimetal RhSi crystalline thin films".PHYSICAL REVIEW MATERIALS 7.5(2023):6. |
入库方式： OAI收割
来源：金属研究所
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