Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching
文献类型：期刊论文
| 作者 | Huang, Biaohong2,3; Zhao, Xuefeng1; Li, Xiaoqi2,3; Li, Lingli2,3; Xie, Zhongshuai4; Wang, Di1; Feng, Dingshuai2,3; Jiang, Yuxuan2,3; Liu, Jingyan2,3; Li, Yizhuo2 |
| 刊名 | ACS NANO
 |
| 出版日期 | 2023-06-26 |
| 卷号 | 17期号:13页码:12347-12357 |
| 关键词 | self-polarization Schottky barrier oxygenvacancy BiFeO3 ferroelectric diode |
| ISSN号 | 1936-0851 |
| DOI | 10.1021/acsnano.3c01548 |
| 通讯作者 | Xing, Guozhong(gzxing@ime.ac.cn) ; Hu, Weijin(wjhu@imr.ac.cn) |
| 英文摘要 | Controllingthe domain evolution is critical both for optimizingferroelectric properties and for designing functional electronic devices.Here we report an approach of using the Schottky barrier formed atthe metal/ferroelectric interface to tailor the self-polarizationstates of a model ferroelectric thin film heterostructure system SrRuO3/(Bi,Sm)FeO3. Upon complementary investigationsof the piezoresponse force microscopy, electric transport measurements,X-ray photoelectron/absorption spectra, and theoretical studies, wedemonstrate that Sm doping changes the concentration and spatial distributionof oxygen vacancies with the tunable host Fermi level which modulatesthe SrRuO3/(Bi,Sm)FeO3 Schottky barrier andthe depolarization field, leading to the evolution of the system froma single domain of downward polarization to polydomain states. Accompaniedby such modulation on self-polarization, we further tailor the symmetryof the resistive switching behaviors and achieve a colossal on/offratio of similar to 1.1 x 10(6) in the corresponding SrRuO3/BiFeO3/Pt ferroelectric diodes (FDs). In addition,the present FD also exhibits a fast operation speed of similar to 30ns with a potential for sub-nanosecond and an ultralow writing currentdensity of similar to 132 A/cm(2). Our studies provide a wayfor engineering self-polarization and reveal its strong link to thedevice performance, facilitating FDs as a competitive memristor candidateused for neuromorphic computing. |
| 资助项目 | National Natural Science Foundation of China[62074164] ; National Natural Science Foundation of China[61974147] ; National Natural Science Foundation of China[52031014] ; National Key Ramp;D Program[2021YFB360130] ; National Key Ramp;D Program[2019YFB2205100] ; Strategic Priority Research Program of CAS[XDB44010100] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:001018116600001 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; National Key Ramp;D Program ; Strategic Priority Research Program of CAS |
| 源URL | [http://ir.imr.ac.cn/handle/321006/178549]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Xing, Guozhong; Hu, Weijin |
| 作者单位 | 1.Univ Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Univ Sci & Technol China USTC, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Peoples R China 5.South Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA |
| 推荐引用方式 GB/T 7714 | Huang, Biaohong,Zhao, Xuefeng,Li, Xiaoqi,et al. Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching[J]. ACS NANO,2023,17(13):12347-12357. |
| APA | Huang, Biaohong.,Zhao, Xuefeng.,Li, Xiaoqi.,Li, Lingli.,Xie, Zhongshuai.,...&Zhang, Zhidong.(2023).Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching.ACS NANO,17(13),12347-12357. |
| MLA | Huang, Biaohong,et al."Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching".ACS NANO 17.13(2023):12347-12357. |
入库方式： OAI收割
来源：金属研究所
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