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Internal ion transport in ionic 2D CuInP2S6 enabling multi-state neuromorphic computing with low operation current

文献类型：期刊论文

作者Sun, Yujie4,5; Zhang, Rongjie4,5; Teng, Changjiu4,5; Tan, Junyang4,5; Zhang, Zehao4,5; Li, Shengnan4,5; Wang, Jingwei4,5; Zhao, Shilong4,5; Chen, Wenjun3; Liu, Bilu4,5
刊名MATERIALS TODAY
出版日期2023-06-01
卷号66页码:9-16
关键词Memristor Multi-state computing Ion transport Ionic 2D materials Linear states Low operation current
ISSN号1369-7021
DOI10.1016/j.mattod.2023.04.013
通讯作者Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
英文摘要Memristor-based neuromorphic computing is promising for artificial intelligence. However, most of the reported memristors have limited linear computing states and consume large operation energy which hinder their applications. Herein, we report a memristor based on ionic two-dimensional CuInP2S6 (2D CIPS), in which up to 1350 linear conductance states are achieved by controlling the migration of internal Cu ions in CIPS. In addition, the device shows a low operation current of -100 pA. Cu ions are proven to move along the electric field by in-situ scanning electron microscopy and energy dispersive spectroscopy measurements. Furthermore, complex signal transport among multiple neurons in the brain is imitated by 2D CIPS-based memristor arrays. Our results offer a new platform to fabricate high-performance memristors based on ion transport in 2D materials for neuromorphic computing.
资助项目National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[52102179] ; National Natural Science Foundation of China[52188101] ; National Science Fund for Distinguished Young Scholars[52125309] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Natural Science Foundation of Guangdong Province[2023A1515011752] ; Shenzhen Basic Research Program[JCYJ20200109144616617] ; Shenzhen Basic Research Program[JCYJ20220818101014029] ; Tsinghua Shenzhen International Graduate School (Tsinghua SIGS)
WOS研究方向Materials Science
语种英语
WOS记录号WOS:001034130000001
出版者ELSEVIER SCI LTD
资助机构National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars ; Guangdong Innovative and Entrepreneurial Research Team Program ; Natural Science Foundation of Guangdong Province ; Shenzhen Basic Research Program ; Tsinghua Shenzhen International Graduate School (Tsinghua SIGS)
源URL[http://ir.imr.ac.cn/handle/321006/178618]  
专题金属研究所_中国科学院金属研究所
通讯作者Liu, Bilu; Cheng, Hui-Ming
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Chinese Acad Sci, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, Fac Mat Sci & Engn, Shenzhen 518055, Peoples R China
3.Foshan Univ, Sch Elect Informat Engn, Foshan 528000, Peoples R China
4.Tsinghua Univ, Inst Mat Res, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
5.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714		 Sun, Yujie,Zhang, Rongjie,Teng, Changjiu,et al. Internal ion transport in ionic 2D CuInP2S6 enabling multi-state neuromorphic computing with low operation current[J]. MATERIALS TODAY,2023,66:9-16.
APA Sun, Yujie.,Zhang, Rongjie.,Teng, Changjiu.,Tan, Junyang.,Zhang, Zehao.,...&Cheng, Hui-Ming.(2023).Internal ion transport in ionic 2D CuInP2S6 enabling multi-state neuromorphic computing with low operation current.MATERIALS TODAY,66,9-16.
MLA Sun, Yujie,et al."Internal ion transport in ionic 2D CuInP2S6 enabling multi-state neuromorphic computing with low operation current".MATERIALS TODAY 66(2023):9-16.

入库方式： OAI收割

来源：金属研究所

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