In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S
文献类型：期刊论文
| 作者 | Wang, Yanxu1; Gong, Wu2; Kawasaki, Takuro2; Harjo, Stefanus2; Zhang, Kun1; Zhang, Zhidong1; Li, Bing1 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2023-07-03 |
| 卷号 | 123期号:1页码:6 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/5.0158607 |
| 通讯作者 | Li, Bing(bingli@imr.ac.cn) |
| 英文摘要 | Bulk Ag2S is a plastic inorganic semiconductor at room temperature. It exhibits a compressive strain greater than 50%, which is highly different from brittle conventional counterparts, such as silicon. Here, we present the experimental investigation of the deformation behavior in a plastic inorganic semiconductor Ag2S using in situ neutron diffraction during compressive deformation at room and elevated temperatures. At room temperature, the lattice strain partitioning among hkl-orientated grain families could be responsible for the significant work-hardening behavior in the bulk Ag2S with a monoclinic structure. The rapid accumulation of lattice defects and remarkable development of the deformation texture suggest that dislocation slip promotes plasticity. At 453 K, a monoclinic phase transforms into a body-centered cubic phase. A stress plateau appears at similar to-4.8 MPa, followed by a rehardening state. The deformation mode of bulk Ag2S at the initial stage is likely attributable to the migration of silver ions, and as strain increases, it is closer to that of room temperature, leading to rehardening. |
| 资助项目 | Ministry of Science and Technology of China[2022YFE0109900] ; National Natural Science Foundation of China[11934007] ; Young Talent Program of SYNL |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001025214300007 |
| 出版者 | AIP Publishing |
| 资助机构 | Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Young Talent Program of SYNL |
| 源URL | [http://ir.imr.ac.cn/handle/321006/178633]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Li, Bing |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Japan Atom Energy Agcy, J PARC Ctr, 2-4 Shirane, Ibaraki, 3191195, Japan |
| 推荐引用方式 GB/T 7714 | Wang, Yanxu,Gong, Wu,Kawasaki, Takuro,et al. In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S[J]. APPLIED PHYSICS LETTERS,2023,123(1):6. |
| APA | Wang, Yanxu.,Gong, Wu.,Kawasaki, Takuro.,Harjo, Stefanus.,Zhang, Kun.,...&Li, Bing.(2023).In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S.APPLIED PHYSICS LETTERS,123(1),6. |
| MLA | Wang, Yanxu,et al."In situ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag2S".APPLIED PHYSICS LETTERS 123.1(2023):6. |
入库方式： OAI收割
来源：金属研究所
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