High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device
文献类型：期刊论文
| 作者 | Hu, Zhenqing1,2; Yu, Hailong1,2; He, Juan1,2; Ran, Yijun1,2; Zeng, Hao1,2; Zhao, Yang1; Yu, Zhi1; Tai, Kaiping1,2 |
| 刊名 | ACTA METALLURGICA SINICA-ENGLISH LETTERS
 |
| 出版日期 | 2023-07-26 |
| 页码 | 10 |
| 关键词 | Thermoelectric thin film GeTe-based materials Sb doping Carrier concentration Thermoelectric generator |
| ISSN号 | 1006-7191 |
| DOI | 10.1007/s40195-023-01584-x |
| 通讯作者 | Tai, Kaiping(kptai@imr.ac.cn) |
| 英文摘要 | GeTe-based materials have attracted significant attention as high-efficiency thermoelectric materials for mid-temperature applications. However, GeTe thin-film materials with thermoelectric performances comparable to that of their bulk counterparts have not yet been reported, because of their unsatisfactory electrical and thermal properties caused by their poor crystal quality and high carrier concentration. Herein, a series of Sb-doped GeTe films and devices with remarkable thermoelectric performances are presented. These films are prepared through magnetron sputtering deposition at 553 K and exhibit a unique microstructure that consists of coarse- and fine-sized grains with high crystallization quality. The fine grains enhance the scattering associated with phonon transport and the coarse grains provide electron transport channels, which can suppress the thermal conductivity without obviously sacrificing the electrical conductivity. Moreover, Sb doping can effectively optimize the carrier concentration and increase the carrier effective mass, while introducing point defects and stacking faults to further scatter the phonon transport and decrease the thermal conductivity. Consequently, a peak power factor of 22.37 & mu;W cm(-1) K-2 is obtained at 703 K and a maximum thermoelectric figure of merit of 1.53 is achieved at 673 K, which are substantially larger than the values reported in the existing literature. A flexible thermoelectric generator is designed and fabricated using Sb-doped GeTe films deposited on polyimide and achieves a maximum output power density of 2.22 x 10(3) W m(-2) for a temperature difference of 300 K. |
| 资助项目 | Ministry of Science and Technology of China[2017YFA0700702] ; Ministry of Science and Technology of China[2017YFA0700705] ; National Natural Science Foundation of China[52073290] ; National Natural Science Foundation of China[51927803] ; Liaoning Province Science and Technology Plan Project[2022-MS-011] ; Science Fund for Distinguished Young Scholars of Liaoning Province[2023JH6/100500004] ; Science and Technology Plan Projects of Shenyang[21108901] |
| WOS研究方向 | Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001034209400002 |
| 出版者 | CHINESE ACAD SCIENCES, INST METAL RESEARCH |
| 资助机构 | Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Liaoning Province Science and Technology Plan Project ; Science Fund for Distinguished Young Scholars of Liaoning Province ; Science and Technology Plan Projects of Shenyang |
| 源URL | [http://ir.imr.ac.cn/handle/321006/178720]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Tai, Kaiping |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, Zhenqing,Yu, Hailong,He, Juan,et al. High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device[J]. ACTA METALLURGICA SINICA-ENGLISH LETTERS,2023:10. |
| APA | Hu, Zhenqing.,Yu, Hailong.,He, Juan.,Ran, Yijun.,Zeng, Hao.,...&Tai, Kaiping.(2023).High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device.ACTA METALLURGICA SINICA-ENGLISH LETTERS,10. |
| MLA | Hu, Zhenqing,et al."High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device".ACTA METALLURGICA SINICA-ENGLISH LETTERS (2023):10. |
入库方式： OAI收割
来源：金属研究所
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