Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures
文献类型：期刊论文
| 作者 | Li, Yang1,2; Zhao, Xiaotian2; Liu, Wei2; Wu, Jinxiang1,2; Liu, Long2; Song, Yuhang1,2; Ma, Jun1,2; Zhang, Zhidong2 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2023-07-17 |
| 卷号 | 123期号:3页码:7 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/5.0157986 |
| 通讯作者 | Zhao, Xiaotian(xtzhao@imr.ac.cn) ; Liu, Wei(wliu@imr.ac.cn) |
| 英文摘要 | The ability to efficiently manipulate magnetization is of great significance for practical applications of spin-orbit torque (SOT) devices. In this study, we report the voltage-controlled, field-free SOT switching in perpendicular magnetized Pt/Co/Ir/MgO structures with wedge iridium interlayers. The insertion of a thin iridium interlayer at ferromagnet/oxide can significantly reduce the perpendicular magnetic anisotropy depending on the Ir thickness. The wedging of the iridium layer breaks lateral structural symmetry, resulting in deterministic switching without the assistance of in-plane magnetic fields. In such a structure, the SOT critical switching currents are remarkably decreased by 29% when a positive 6 V gate voltage is applied. Further quantitative analysis shows that multiple factors contribute to the decrease in switching currents, including a 23% reduction in magnetic anisotropy energy, a reduction in nucleation field, and a minor enhancement in damping-like torque under gate voltage. Moreover, the probabilistic hindrance that gate voltage poses to field-free switching is revealed by the decrease in current-induced perpendicular effective fields from symmetry-breaking. Our research shows that energy-efficient SOT switching can be controlled by gating and offers insight into the mechanism behind voltage-gated SOT switching. |
| 资助项目 | National Natural Science Foundation of China[52031014] ; National Natural Science Foundation of China[52171196] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001031779000005 |
| 出版者 | AIP Publishing |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/178864]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Zhao, Xiaotian; Liu, Wei |
| 作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Yang,Zhao, Xiaotian,Liu, Wei,et al. Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures[J]. APPLIED PHYSICS LETTERS,2023,123(3):7. |
| APA | Li, Yang.,Zhao, Xiaotian.,Liu, Wei.,Wu, Jinxiang.,Liu, Long.,...&Zhang, Zhidong.(2023).Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures.APPLIED PHYSICS LETTERS,123(3),7. |
| MLA | Li, Yang,et al."Voltage-gated field-free spin-orbit torque switching in Pt/Co/Ir/MgO wedged structures".APPLIED PHYSICS LETTERS 123.3(2023):7. |
入库方式： OAI收割
来源：金属研究所
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