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Single-dislocation ultraviolet light emission

文献类型：期刊论文

作者Yan, Xuexi2; Jin, Qianqian1; Jiang, Yixiao2; Yao, Tingting2; Wang, Xinwei2; Li, Xiang2; Gao, Chunyang2; Chen, Chunlin2,5; Ye, Hengqiang5; Ma, Xiu-Liang2,3,4
刊名ACTA MATERIALIA
出版日期2023-09-15
卷号257页码:9
关键词Threading dislocations Band gap Transmission electron microscopy Electron energy-loss spectroscopy First-principles calculations Cathodoluminescence AlN
ISSN号1359-6454
DOI10.1016/j.actamat.2023.119169
通讯作者Jiang, Yixiao(yxjiang11s@imr.ac.cn) ; Chen, Chunlin(clchen@imr.ac.cn)
英文摘要Micro-nano ultraviolet light sources have recently attracted great attention due to their promising applications in future quantum display, photoelectric detection sensors, biomedical devices, and so on. Design of ultraviolet light sources with smaller size, stronger emission intensity, and higher integration, are the key aspects for the development of high-performance micro-nano ultraviolet devices. Here, we demonstrate that unidirectional threading dislocation arrays in an AlN thin film can emit ultraviolet light with wavelength of - 317 nm. The density of AlN dislocations is - 4 x 1010 cm-2, and the light emission intensity of AlN dislocations is comparable to the intrinsic emission of the AlN thin film. By combining aberration-corrected transmission electron microscopy, atomic-resolution valence electron energy-loss spectroscopy, and first-principles calculations, the atomic and electronic structures and the band gaps of the AlN threading dislocations are determined. It is found that the AlN threading dislocations are comprised of edge, screw, and mixed dislocations. All the AlN dislocations exhibit smaller band gaps compared to the AlN bulk due to the increase of the Al-N bond length at the dislocation cores. The dangling bonds of Al and N at the edge dislocations, Al-Al and N-N bonds at the screw dislocations cause the defect states in the band gaps. This study not only has clarified the atomic origin of dislocation nano-optics, but also will encourage the development of microelectronics and optoelectronic devices based on dislocation ultraviolet light emission.
资助项目National Natural Science Foundation of China[52125101] ; National Natural Science Foundation of China[51971224] ; National Natural Science Foundation of China[52001309] ; Basic and Applied Basic Research Major Programme of Guangdong Province, China[292020000008] ; CAS Interdisciplinary Innovation Team[QYZDY-SSW-JSC027] ; Key Research Program of Frontier Sciences, CAS[X210141TL210] ; [2021B0301030003]
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:001047129600001
出版者PERGAMON-ELSEVIER SCIENCE LTD
资助机构National Natural Science Foundation of China ; Basic and Applied Basic Research Major Programme of Guangdong Province, China ; CAS Interdisciplinary Innovation Team ; Key Research Program of Frontier Sciences, CAS
源URL[http://ir.imr.ac.cn/handle/321006/178972]  
专题金属研究所_中国科学院金属研究所
通讯作者Jiang, Yixiao; Chen, Chunlin
作者单位1.Guangxi Univ Sci & Technol, Ctr Struct Adv Matter, Sch Elect Engn, Liuzhou 545006, Peoples R China
2.Univ Sci & Technol China, Inst Met Res, Chinese Acad Sci, Sch Mat Sci & Engn,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
4.Bay Area Ctr Electron Microscopy, Songshan Lake Mat Lab, Dongguan 523808, Peoples R China
5.Ji Hua Lab, Foshan 528200, Peoples R China
推荐引用方式
GB/T 7714		 Yan, Xuexi,Jin, Qianqian,Jiang, Yixiao,et al. Single-dislocation ultraviolet light emission[J]. ACTA MATERIALIA,2023,257:9.
APA Yan, Xuexi.,Jin, Qianqian.,Jiang, Yixiao.,Yao, Tingting.,Wang, Xinwei.,...&Ma, Xiu-Liang.(2023).Single-dislocation ultraviolet light emission.ACTA MATERIALIA,257,9.
MLA Yan, Xuexi,et al."Single-dislocation ultraviolet light emission".ACTA MATERIALIA 257(2023):9.

入库方式： OAI收割

来源：金属研究所

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