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Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films

文献类型：期刊论文

作者Yu, Guoliang1; Tang, Chuhan1; Tian, Zhiqiang1; Zhu, Ziming1; Liu, Peitao2,4; Pan, Anlian3; Chen, Mingxing1; Chen, Xing-Qiu2,4
刊名PHYSICAL REVIEW B
出版日期2023-07-12
卷号108期号:1页码:9
ISSN号2469-9950
DOI10.1103/PhysRevB.108.014106
通讯作者Chen, Mingxing(mxchen@hunnu.edu.cn)
英文摘要Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low-energy consumption. The newly discovered layered MnBi2Te4(Bi2Te3)n and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings based on the Heisenberg model and first-principles calculations. Our strategy relies on the fact that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hopping channel between Mn-eg orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-toferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in the MnBi2Te4 family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials.
资助项目National Natural Science Foundation of China[11774084] ; National Natural Science Foundation of China[U19A2090] ; National Natural Science Foundation of China[91833302] ; State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China ; [12174098]
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:001059714200003
出版者AMER PHYSICAL SOC
资助机构National Natural Science Foundation of China ; State Key Laboratory of Powder Metallurgy, Central South University, Changsha, China
源URL[http://ir.imr.ac.cn/handle/321006/179101]  
专题金属研究所_中国科学院金属研究所
通讯作者Chen, Mingxing
作者单位1.Hunan Normal Univ, Sch Phys & Elect, Key Lab Matter Microstruct & Funct Hunan Prov, Key Lab Low Dimens Quantum Struct & Quantum Contro, Changsha 410081, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Hunan Univ, Coll Mat Sci & Engn, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Peoples R China
4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714		 Yu, Guoliang,Tang, Chuhan,Tian, Zhiqiang,et al. Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films[J]. PHYSICAL REVIEW B,2023,108(1):9.
APA Yu, Guoliang.,Tang, Chuhan.,Tian, Zhiqiang.,Zhu, Ziming.,Liu, Peitao.,...&Chen, Xing-Qiu.(2023).Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films.PHYSICAL REVIEW B,108(1),9.
MLA Yu, Guoliang,et al."Ferroelectrically switchable magnetic multistates in MnBi2Te4(Bi2Te3)n and MnSb2Te4(Sb2Te3)n (n=0,1) thin films".PHYSICAL REVIEW B 108.1(2023):9.

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来源：金属研究所

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