Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films
文献类型：期刊论文
| 作者 | Yue, Zhi Yun1,3; Zhang, Zhi Dong1,3; Wang, Zhan Jie2 |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2023-12-15 |
| 卷号 | 968页码:7 |
| 关键词 | PCZT thin films Au nanoparticles Ferroelectric polarization Multi-level data storage Resistive switching |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2023.171832 |
| 通讯作者 | Wang, Zhan Jie(wangzj@imr.ac.cn) |
| 英文摘要 | The ferroelectric memristor, as a new type of nonvolatile memory, has a broad prospect in the fields of infor-mation storage, exchange, and neural computing. Nowadays, it is still a challenge to achieve ferroelectric memristor with high resistive switching effect. In this work, epitaxial Ca-doped Pb(Zr0.40Ti0.60)O3 films embedded various concentrations Au nanoparticles (NPs) (Abbreviated as Au-PCZT) were deposited on the Nb: SrTiO3 (NSTO) substrate to form Au-PCZT/NSTO heterostructures. On the one hand, adding appropriate Au NPs into the PCZT films can improve the leakage current. When Au NPs capture electrons, the current in the high resistance state will be decreased due to the coulomb blocking effect. On the other hand, the ferroelectric po-larization still maintains at a good level. Eventually, the resistive switching (RS) on/off ratio can reach 106 by embedding 3 mol% Au NPs. Compared with the pure PCZT thin films, the resistance-variable switching ratio is improved by two orders of magnitude. In addition, multi-level data storage can be realized under different bias voltages. Our results provide a feasible way to achieve high-on/off-ratio ferroelectric memristors with multi-level data storage capabilities. |
| 资助项目 | Central Government Guiding Local Science and Technology Development Funds of Liaoning Province[2021JH6/10500168] ; National Basic Research Program[2017YFA0206302] |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001070514600001 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | Central Government Guiding Local Science and Technology Development Funds of Liaoning Province ; National Basic Research Program |
| 源URL | [http://ir.imr.ac.cn/handle/321006/179225]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, Zhan Jie |
| 作者单位 | 1.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 2.Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yue, Zhi Yun,Zhang, Zhi Dong,Wang, Zhan Jie. Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2023,968:7. |
| APA | Yue, Zhi Yun,Zhang, Zhi Dong,&Wang, Zhan Jie.(2023).Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films.JOURNAL OF ALLOYS AND COMPOUNDS,968,7. |
| MLA | Yue, Zhi Yun,et al."Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films".JOURNAL OF ALLOYS AND COMPOUNDS 968(2023):7. |
入库方式： OAI收割
来源：金属研究所
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