Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
文献类型：期刊论文
| 作者 | Yue, Zhi Yun1,2; Zhang, Zhi Dong1,2; Wang, Zhan Jie3 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2024-02-01 |
| 卷号 | 171页码:139-146 |
| 关键词 | Ferroelectric memristor Ca -doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching |
| ISSN号 | 1005-0302 |
| DOI | 10.1016/j.jmst.2023.07.007 |
| 通讯作者 | Wang, Zhan Jie(wangzj@imr.ac.cn) |
| 英文摘要 | As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr 0.40 Ti 0.60 )O 3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO 3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 x 10 5 , about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices. & COPY; 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 资助项目 | Central Government Guiding Local Science and Technology Development Funds of Liaoning Province in 2021[2021JH6/10500168] ; National Basic Research Program of China[2017YFA0206302] |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:001064945100001 |
| 出版者 | JOURNAL MATER SCI TECHNOL |
| 资助机构 | Central Government Guiding Local Science and Technology Development Funds of Liaoning Province in 2021 ; National Basic Research Program of China |
| 源URL | [http://ir.imr.ac.cn/handle/321006/179231]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, Zhan Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yue, Zhi Yun,Zhang, Zhi Dong,Wang, Zhan Jie. Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2024,171:139-146. |
| APA | Yue, Zhi Yun,Zhang, Zhi Dong,&Wang, Zhan Jie.(2024).Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,171,139-146. |
| MLA | Yue, Zhi Yun,et al."Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 171(2024):139-146. |
入库方式： OAI收割
来源：金属研究所
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