Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films
文献类型：期刊论文
| 作者 | Li, Mingze1,3; Wang, Zhenhua1,3; Shi, Xudong1,3; Li, Tingting1,3; Gao, Xuan P. A.2; Zhang, Zhidong1,3 |
| 刊名 | JOURNAL OF SOLID STATE CHEMISTRY
 |
| 出版日期 | 2023-12-01 |
| 卷号 | 328页码:8 |
| 关键词 | P -type topological insulators Structure geometry control High surface -to -bulk ratio Chemical potential tuning Linear magnetoresistance Topological surface states |
| ISSN号 | 0022-4596 |
| DOI | 10.1016/j.jssc.2023.124315 |
| 通讯作者 | Li, Mingze(mzli14s@imr.ac.cn) ; Wang, Zhenhua(zhwang@imr.ac.cn) |
| 英文摘要 | We report the electrical and magnetic transport behavior in vertical Cu-doped Bi2Se3 nanoplate films prepared by the chemical vapor deposition method. In vertical Cu-doped Bi2Se3 nanoplate films, the topological surface states are tuned by both the large surface-to-bulk ratio and the Cu doping. Due to their high specific surface area, the magnetoresistance of the vertical undoped Bi2Se3 nanoplate film exhibits a weak antilocalization effect, and it indicates that the topological surface state properties are greatly enhanced. In vertical Cu-doped Bi2Se3 nanoplate films, the electron doping is inhibited, and the carrier type is changed from n-type to p-type. The observed linear magnetoresistance is attributed to have a quantum origin from the topological surface states. When the Cu concentration reaches 1.73 at.% in vertical Bi2Se3 nanoplate film, the linear magnetoresistance can be maintained up to 100 K. Meanwhile, these vertical nanoplate films exhibit the 3D magnetotransport property. Thus, using the same material system with a broad range of carrier density and type, our work shows the transition from a weak-antilocalization to linear magnetoresistance in nanostructured topological insulator Bi2Se3 films with an unusual morphology where the nanoplates are vertically aligned to increase the surface area. |
| 资助项目 | National Natural Science Foundation of China (NSFC)[51971220] ; National Natural Science Foundation of China (NSFC)[52201233] ; National Natural Science Foundation of China (NSFC)[52031014] |
| WOS研究方向 | Chemistry |
| 语种 | 英语 |
| WOS记录号 | WOS:001079216700001 |
| 出版者 | ACADEMIC PRESS INC ELSEVIER SCIENCE |
| 资助机构 | National Natural Science Foundation of China (NSFC) |
| 源URL | [http://ir.imr.ac.cn/handle/321006/179403]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Li, Mingze; Wang, Zhenhua |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Mingze,Wang, Zhenhua,Shi, Xudong,et al. Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films[J]. JOURNAL OF SOLID STATE CHEMISTRY,2023,328:8. |
| APA | Li, Mingze,Wang, Zhenhua,Shi, Xudong,Li, Tingting,Gao, Xuan P. A.,&Zhang, Zhidong.(2023).Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films.JOURNAL OF SOLID STATE CHEMISTRY,328,8. |
| MLA | Li, Mingze,et al."Transition from weak antilocalization to linear magnetoresistance by tuning structure geometry and chemical potential in nanostructured Bi2Se3 films".JOURNAL OF SOLID STATE CHEMISTRY 328(2023):8. |
入库方式： OAI收割
来源：金属研究所
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