Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure
文献类型：期刊论文
| 作者 | R. Yu, F. Yin, D. Zhou, H. Zhu and W. Ji |
| 出版日期 | 2023 |
| 页码 | 4548-4553 |
| ISSN号 | 19487185 |
| DOI | 10.1021/acs.jpclett.3c00853 |
| 英文摘要 | Charge carriers are the basic physical element in an electrically driven quantum-dot light-emitting diode (QLED), which acts as a converter transforming electric energy to light energy. Therefore, it is widely sought after to manage the charge carriers for achieving efficient energy conversion; however, to date, there has been a lack of understanding and efficient strategies. Here, an efficient QLED is achieved by manipulating the charge distribution and dynamics with an n-type 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi) layer embedded into the hole-transport layer. Compared with the control QLED, the maximum current efficiency of the TPBi-containing device is enhanced over 30%, reaching 25.0 cd/A, corresponding to a 100% internal quantum efficiency considering the ∼90% photoluminescence quantum yield of the QD film. Our results suggest that there is still a great deal of room to further improve the efficiency in a standard QLED by subtly manipulating the charge carriers. © 2023 American Chemical Society. |
| URL标识 | 查看原文 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/68116]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | R. Yu, F. Yin, D. Zhou, H. Zhu and W. Ji. Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure[J],2023:4548-4553. |
| APA | R. Yu, F. Yin, D. Zhou, H. Zhu and W. Ji.(2023).Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure.,4548-4553. |
| MLA | R. Yu, F. Yin, D. Zhou, H. Zhu and W. Ji."Efficient Quantum-Dot Light-Emitting Diodes Enabled via a Charge Manipulating Structure".(2023):4548-4553. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。