Raman Spectroscopy Application in Anisotropic 2D Materials
文献类型：期刊论文
| 作者 | X. Zhao, Z. P. Li, S. R. Wu, M. Lu, X. J. Xie, D. Zhan and J. X. Yan |
| 刊名 | Advanced Electronic Materials
 |
| 出版日期 | 2024 |
| 卷号 | 10期号:2页码:20 |
| ISSN号 | 2199-160X |
| DOI | 10.1002/aelm.202300610 |
| 英文摘要 | In recent years, anisotropic 2D materials (black phosphorus, ReS2, WTe2, etc.) have garnered significant attention due to their orientation-dependent physical and chemical properties, along with their potential applications in micro-nano device development, such as crystal-based diodes, polarized light photodetectors, and directional heat transfer. As a practical, quick, and nondestructive characterization tool, Raman spectroscopy, with its unique and unmatched advantages in studying anisotropic materials, plays a crucial role. It enables lattice orientation identification, investigation of structural phase transitions, and examination of anisotropic lattice vibrations, among other aspects. Here, a comprehensive review of recent developments in Raman spectroscopy research on anisotropic materials is provided. To begin, this study introduces the classification of anisotropic materials before delving into the polarized Raman spectroscopy principle. Various research directions of Raman spectroscopy in anisotropic materials are explored, including lattice orientation identification, temperature dependence, interlayer coupling, electron-phonon interaction, thickness dependence, and high-pressure phase transition. Finally, potential future directions in the field of Raman spectroscopy for anisotropic materials are discussed, and the potential challenges that may arise are addressed. Anisotropic 2D materials have garnered significant attention due to their orientation-dependent physical and chemical properties. Raman spectroscopy, a nondestructive tool, is pivotal in studying these materials. This review delves into the advancements in Raman research on anisotropic materials, including lattice orientation identification, temperature dependence, interlayer coupling, electron-phonon interaction, thickness dependence, and high-pressure phase transition.image |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/68242]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | X. Zhao, Z. P. Li, S. R. Wu, M. Lu, X. J. Xie, D. Zhan and J. X. Yan. Raman Spectroscopy Application in Anisotropic 2D Materials[J]. Advanced Electronic Materials,2024,10(2):20. |
| APA | X. Zhao, Z. P. Li, S. R. Wu, M. Lu, X. J. Xie, D. Zhan and J. X. Yan.(2024).Raman Spectroscopy Application in Anisotropic 2D Materials.Advanced Electronic Materials,10(2),20. |
| MLA | X. Zhao, Z. P. Li, S. R. Wu, M. Lu, X. J. Xie, D. Zhan and J. X. Yan."Raman Spectroscopy Application in Anisotropic 2D Materials".Advanced Electronic Materials 10.2(2024):20. |
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