Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature
文献类型：期刊论文
| 作者 | Y. X. Zhu, K. W. Liu, X. Q. Huang, P. X. Zhang, Q. Ai, Z. Cheng, J. L. Yang, X. Chen, B. H. Li, L. Liu and D. Z. Shen |
| 刊名 | Ieee Electron Device Letters
 |
| 出版日期 | 2023 |
| 卷号 | 44期号:5页码:737-740 |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/led.2023.3262755 |
| 英文摘要 | A self-driven p-GaN/i-ZnGa2O4/n-ITO heterojunction broadband ultraviolet (BUV) photodetector was firstly demonstrated in this work with a high working temperature. In the 25-300 degrees C temperature range, the device exhibits excellent and stable BUV photodetection performance. Even at 300 degrees C, a large peak responsivity of similar to 132 mA/W, a broad UV response band ranging from 250 to 400 nm, a high UV-to-visible rejection ratio of nearly 104, and a high -3 dB cutoff frequency of 20 kHz can be still observed at 0 V, which is obviously superior to the other reported high-temperature BUV heterojunction photodetectors. The remarkable performance of our device at high temperature can be attributed to the excellent insulation and high crystalline quality of i-ZnGa2O4 layer, as well as the good electrical properties of p-GaN and n-ITO. Moreover, their wide and complementary band gaps make the device have a very broad UV detection band. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/68290]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | Y. X. Zhu, K. W. Liu, X. Q. Huang, P. X. Zhang, Q. Ai, Z. Cheng, J. L. Yang, X. Chen, B. H. Li, L. Liu and D. Z. Shen. Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature[J]. Ieee Electron Device Letters,2023,44(5):737-740. |
| APA | Y. X. Zhu, K. W. Liu, X. Q. Huang, P. X. Zhang, Q. Ai, Z. Cheng, J. L. Yang, X. Chen, B. H. Li, L. Liu and D. Z. Shen.(2023).Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature.Ieee Electron Device Letters,44(5),737-740. |
| MLA | Y. X. Zhu, K. W. Liu, X. Q. Huang, P. X. Zhang, Q. Ai, Z. Cheng, J. L. Yang, X. Chen, B. H. Li, L. Liu and D. Z. Shen."Self-Powered p-GaN/i-ZnGa2O4/n-ITO Heterojunction Broadband Ultraviolet Photodetector with High Working Temperature".Ieee Electron Device Letters 44.5(2023):737-740. |
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