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Constructing Slip Stacking Diversity in Van der Waals Homobilayers

文献类型：期刊论文

作者Chen, Yun7,8,9; Lin JG(林金国)6; Jiang, Junjie5,8; Wang, Danyang8; Yu, Yue4; Li, Shouheng8; Pan, Jun'an7; Chen, Haitao3; Mao, Weiguo2; Xing, Huanhuan8
刊名ADVANCED MATERIALS
出版日期2024-07-31
页码12
关键词interlayer stacking engineering low symmetry 2D materials slip stacking
ISSN号0935-9648
DOI10.1002/adma.202404734
通讯作者Liu, Feng(liufeng@imech.ac.cn) ; Wang, Shanshan(wangshanshan08@nudt.edu.cn) ; Zhang, Jin(jinzhang@pku.edu.cn)
英文摘要The van der Waals (vdW) interface provides two important degrees of freedom-twist and slip-to tune interlayer structures and inspire unique physics. However, constructing diversified high-quality slip stackings (i.e., lattice orientations between layers are parallel with only interlayer sliding) is more challenging than twisted stackings due to angstrom-scale structural discrepancies between different slip stackings, sparsity of thermodynamically stable candidates and insufficient mechanism understanding. Here, using transition metal dichalcogenide (TMD) homobilayers as a model system, this work theoretically elucidates that vdW materials with low lattice symmetry and weak interlayer coupling allow the creation of multifarious thermodynamically advantageous slip stackings, and experimentally achieves 13 and 9 slip stackings in 1T ''-ReS2 and 1T ''-ReSe2 bilayers via direct growth, which are systematically revealed by atomic-resolution scanning transmission electron microscopy (STEM), angle-resolved polarization Raman spectroscopy, and second harmonic generation (SHG) measurements. This work also develops modulation strategies to switch the stacking via grain boundaries (GBs) and to expand the slip stacking library from thermodynamic to kinetically favored structures via in situ thermal treatment. Finally, density functional theory (DFT) calculations suggest a prominent dependence of the pressure-induced electronic band structure transition on stacking configurations. These studies unveil a unique vdW epitaxy and offer a viable means for manipulating interlayer atomic registries. Diversified thermodynamically advantageous slip stackings with angstrom-scale structural discrepancies are constructed in low-symmetry van der Waals homobilayers via direct growth. Modulation strategies to switch the stacking via grain boundaries and to expand the slip stacking library from thermodynamic to kinetically favored structures via in situ thermal treatment are developed. The work unveils a unique epitaxy and offers a viable means for manipulating interlayer atomic registries. image
分类号一类
WOS关键词RANGE ; MOS2
资助项目National Natural Science Foundation of China[52222201] ; National Natural Science Foundation of China[52172032] ; National Natural Science Foundation of China[52021006] ; National Natural Science Foundation of China[11972349] ; Young Elite Scientist Sponsorship Program by CAST[YESS20200222] ; Hunan Natural Science Foundation[2022JJ20044] ; Shenzhen Science and Technology Innovation Commission Project[KQTD20221101115627004] ; Ministry of Science and Technology of China[2022YFA1203302] ; Ministry of Science and Technology of China[2022YFA1203304] ; Ministry of Science and Technology of China[2018YFA0703502] ; Strategic Priority Research Program of CAS[XDB36030100] ; Beijing National Laboratory for Molecular Sciences[BNLMS-CXTD-202001] ; Shenzhen Science and Technology Innovation Commission[KQTD20221101115627004] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB0620101]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:001280343400001
资助机构National Natural Science Foundation of China ; Young Elite Scientist Sponsorship Program by CAST ; Hunan Natural Science Foundation ; Shenzhen Science and Technology Innovation Commission Project ; Ministry of Science and Technology of China ; Strategic Priority Research Program of CAS ; Beijing National Laboratory for Molecular Sciences ; Shenzhen Science and Technology Innovation Commission ; Strategic Priority Research Program of the Chinese Academy of Sciences
其他责任者Liu, Feng ; Wang, Shanshan ; Zhang, Jin
源URL[http://dspace.imech.ac.cn/handle/311007/96202]  
专题力学研究所_非线性力学国家重点实验室
作者单位1.Xinjiang Univ, Sch Phys & Technol, State Key Lab Chem & Utilizat Carbon Based Energy, Urumqi 830046, Peoples R China
2.Changsha Univ Sci & Technol, Coll Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China;
3.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410000, Peoples R China;
4.Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China;
5.Cent South Univ, Sch Phys, Hunan Key Lab Supermicrostruct & Ultrafast Proc, Inst Quantum Phys,Hunan Key Lab Nanophoton & Devic, Changsha 410083, Peoples R China;
6.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China;
7.Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China;
8.Natl Univ Def Technol, Coll Aerosp Sci & Engn, Sci & Technol Adv Ceram Fibers & Composites Lab, Hunan Key Lab Mech & Technol Quantum Informat, Changsha 410000, Peoples R China;
9.Peking Univ, Sch Adv Mat, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China;
推荐引用方式
GB/T 7714		 Chen, Yun,Lin JG,Jiang, Junjie,et al. Constructing Slip Stacking Diversity in Van der Waals Homobilayers[J]. ADVANCED MATERIALS,2024:12.
APA Chen, Yun.,林金国.,Jiang, Junjie.,Wang, Danyang.,Yu, Yue.,...&Zhang, Jin.(2024).Constructing Slip Stacking Diversity in Van der Waals Homobilayers.ADVANCED MATERIALS,12.
MLA Chen, Yun,et al."Constructing Slip Stacking Diversity in Van der Waals Homobilayers".ADVANCED MATERIALS (2024):12.

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来源：力学研究所

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