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Carbon quantum dots-embedded reduced graphene oxide compact films for highly pressure-tolerant electrodes

文献类型：期刊论文

作者Lin, Dou3,4; Zhou, Ziyan3,4; Shi RH(史荣豪)2; Chen, Bin3,4; Huang, Zhulin3,4; Tang, Haibin3,4; Wang J(王珺)1; Zhu, Xiaoguang4; Shao, Cheng4; Han, Fangming3,4
刊名JOURNAL OF MATERIALS CHEMISTRY A
出版日期2024-08-06
卷号12期号:31页码:19885-19890
ISSN号2050-7488
DOI10.1039/d4ta03719g
通讯作者Shi, Ronghao(smartsrh@hnas.ac.cn) ; Tang, Haibin(hbtang@issp.ac.cn) ; Han, Fangming(fmhan@issp.ac.cn)
英文摘要High-pressure environments require that power supplies of electronic devices can withstand high pressure without a hard shell. While compact reduced graphene oxide (rGO) electrodes enhance pressure tolerance, they suffer from compromised capacitance and power output due to the decreased ion-accessible surface area and blocked or collapsed ion channels. To overcome this challenge, carbon quantum dots (CQDs) were uniformly embedded into rGO film to create a compact yet porous electrode. This was achieved via a hydrothermal reaction to form a rGO/CQDs hydrosol by bonding CQDs to rGO nanosheets, followed by a subsequent vacuum filtering. The "spacer" function of CQDs improves the ion-accessible surface area, ion migration, and compressive strength of the rGO/CQDs films. Molecular dynamics simulations further confirm that embedded CQDs enhance both Young's modulus and the diffusion coefficient of hydronium ions within the rGO/CQDs films. Thus, at an ultra-high pressure of 360 MPa, the prepared rGO/CQDs films retained an impressive 81.2% of their initial capacitance (219.7 F cm-3 at 0.8 mA cm-2). The rGO/CQDs-based supercapacitors retained a high volumetric power density of 59.4 W cm-3 at 180 MPa. These findings demonstrate the great potential of rGO/CQDs films for pressure-tolerant power supply devices. Uniform CQD-embedded rGO films were made through hydrothermal reaction and vacuum filtration. CQDs boost ion transport and compressive strength. Remarkably, the films retain 81.2% capacitance under ultrahigh pressure (360 MPa).
分类号一类
WOS关键词SOLID-STATE SUPERCAPACITORS ; MICRO-SUPERCAPACITORS ; HIGH AREAL ; PERFORMANCE ; CAPACITANCE ; COMPOSITES
资助项目Natural Science Foundation of China[52072372] ; Natural Science Foundation of China[52372241] ; Natural Science Foundation of China[52222208] ; Hefei Institute of Physical Science Director's Fund[BJPY2023A07] ; Hefei Institute of Physical Science Director's Fund[YZJJ-GGZX-2022-01] ; Hefei Institute of Physical Science Director's Fund[BJPY2022B03] ; Scientific and Technological Research Project of Henan Academy of Sciences[242217018] ; Startup Research Fund of Henan Academy of Sciences[231817007]
WOS研究方向Chemistry ; Energy & Fuels ; Materials Science
语种英语
WOS记录号WOS:001278916100001
资助机构Natural Science Foundation of China ; Hefei Institute of Physical Science Director's Fund ; Scientific and Technological Research Project of Henan Academy of Sciences ; Startup Research Fund of Henan Academy of Sciences
其他责任者Shi, Ronghao ; Tang, Haibin ; Han, Fangming
源URL[http://dspace.imech.ac.cn/handle/311007/96205]  
专题力学研究所_非线性力学国家重点实验室
作者单位1.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China
2.Henan Acad Sci, Inst Mat, Henan Key Lab Adv Cond Mat, Zhengzhou 450046, Peoples R China;
3.Univ Sci & Technol China, Hefei 230026, Peoples R China;
4.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys,HFIPS, Hefei 230031, Peoples R China;
推荐引用方式
GB/T 7714		 Lin, Dou,Zhou, Ziyan,Shi RH,et al. Carbon quantum dots-embedded reduced graphene oxide compact films for highly pressure-tolerant electrodes[J]. JOURNAL OF MATERIALS CHEMISTRY A,2024,12(31):19885-19890.
APA Lin, Dou.,Zhou, Ziyan.,史荣豪.,Chen, Bin.,Huang, Zhulin.,...&Wang J.(2024).Carbon quantum dots-embedded reduced graphene oxide compact films for highly pressure-tolerant electrodes.JOURNAL OF MATERIALS CHEMISTRY A,12(31),19885-19890.
MLA Lin, Dou,et al."Carbon quantum dots-embedded reduced graphene oxide compact films for highly pressure-tolerant electrodes".JOURNAL OF MATERIALS CHEMISTRY A 12.31(2024):19885-19890.

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来源：力学研究所

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