Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions
文献类型：期刊论文
| 作者 | Tang, Lingyun2; Mao, Zhongquan2; Wang, Chutian3; Fu, Qi4; Wang, Chen4; Zhang, Yichi4; Shen, Jingyi4; Yin, Yuefeng3; Shen, Bin5,6; Tan, Dayong7
|
| 刊名 | NATURE COMMUNICATIONS
 |
| 出版日期 | 2023-03-18 |
| 卷号 | 14期号:1页码:8 |
| DOI | 10.1038/s41467-023-37239-9 |
| 英文摘要 | The presence of the van der Waals gap in layered materials creates a wealth of intriguing phenomena different to their counterparts in conventional materials. For example, pressurization can generate a large anisotropic lattice shrinkage along the stacking orientation and/or a significant interlayer sliding, and many of the exotic pressure-dependent properties derive from these mechanisms. Here we report a giant piezoresistivity in pressurized beta '-In2Se3. Upon compression, a six-orders-of-magnitude drop of electrical resistivity is obtained below 1.2 GPa in beta '-In2Se3 flakes, yielding a giant piezoresistive gauge pi(p) of -5.33 GPa(-1). Simultaneously, the sample undergoes a semiconductor-to-semimetal transition without a structural phase transition. Surprisingly, linear dichroism study and theoretical first principles modelling show that these phenomena arise not due to shrinkage or sliding at the van der Waals gap, but rather are dominated by the layer-dependent atomic motions inside the quintuple layer, mainly from the shifting of middle Se atoms to their high-symmetric location. The atomic motions link to both the band structure modulation and the in-plane ferroelectric dipoles. Our work not only provides a prominent piezoresistive material but also points out the importance of intralayer atomic motions beyond van der Waals gap. Lattice shrinkage is a dominating factor for the strain-induced change of the electronic properties in vdW layered materials. Here, the authors discover a piezoresistivity in pressurized beta '-In2Se3, which originates from the intralayer atomic motions. |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| WOS记录号 | WOS:000957141600012 |
| 源URL | [http://ir.gig.ac.cn/handle/344008/74185]  |
| 专题 | 中国科学院广州地球化学研究所 |
| 通讯作者 | Li, Yanchun; Fuhrer, Michael S.; Zheng, Changxi |
| 作者单位 | 1.Ctr High Pressure Sci & Technol Adv Res HPSTAR, Beijing 100094, Peoples R China 2.South China Univ Technol, Sch Phys & Optoelect, Guangzhou 510641, Guangdong, Peoples R China 3.Monash Univ, ARC Ctr Excellence Future Low Energy Elect Technol, Dept Mat Sci & Engn, Clayton, Vic, Australia 4.Westlake Univ, Sch Sci, Key Lab Quantum Mat Zhejiang Prov, Hangzhou 310024, Zhejiang Provin, Peoples R China 5.Zhejiang Univ, Ctr Correlated Matter, Hangzhou, Peoples R China 6.Zhejiang Univ, Dept Phys, Hangzhou, Peoples R China 7.Chinese Acad Sci, Guangzhou Inst Geochem, Guangzhou 510640, Guangdong, Peoples R China 8.Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252000, Peoples R China 9.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China 10.Monash Univ, ARC Ctr Excellence Future Low Energy Elect Technol, Melbourne, Vic 3800, Australia |
| 推荐引用方式 GB/T 7714 | Tang, Lingyun,Mao, Zhongquan,Wang, Chutian,et al. Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions[J]. NATURE COMMUNICATIONS,2023,14(1):8. |
| APA | Tang, Lingyun.,Mao, Zhongquan.,Wang, Chutian.,Fu, Qi.,Wang, Chen.,...&Zheng, Changxi.(2023).Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions.NATURE COMMUNICATIONS,14(1),8. |
| MLA | Tang, Lingyun,et al."Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions".NATURE COMMUNICATIONS 14.1(2023):8. |
入库方式： OAI收割
来源：广州地球化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。