中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties

文献类型:期刊论文

作者Y. Chen, J. Shi, Z. Zhang, G. Miao, H. Jiang and H. Song
刊名Journal of Materials Chemistry C
出版日期2023
卷号11期号:23页码:7697-7704
ISSN号20507526
DOI10.1039/d3tc00317e
英文摘要An AlGaN-based solar-blind UV heterojunction bipolar phototransistor (HBPT) with an AlGaN-based multiple quantum well (MQW) layer as the light absorption layer is proposed in this paper. On the basis of the individually optimized growth of the MQW light absorption layer and the p-type AlGaN base layer, the material growth, device preparation, and performance evaluation of the solar-blind UV HBPT are investigated in detail. The evaluations show that the fabricated two-end NPN-type phototransistor with a floating base presents a low dark current density of about 4.8 × 10−8 A cm−2 and a high peak responsivity of 4.55 A W−1 at 267 nm as the device is biased at a VCE of 12 V, corresponding to a high EQE of 2.1 × 103%. It also exhibits a quick transient response speed of 13.47 ns at a lower bias voltage (VCE = 3 V). These results favorably prove the feasibility of realizing a high performance solar-blind UV photodetector based on the AlGaN-based MQW HBPT. © 2023 The Royal Society of Chemistry.
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源URL[http://ir.ciomp.ac.cn/handle/181722/68562]  
专题中国科学院长春光学精密机械与物理研究所
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Y. Chen, J. Shi, Z. Zhang, G. Miao, H. Jiang and H. Song. AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties[J]. Journal of Materials Chemistry C,2023,11(23):7697-7704.
APA Y. Chen, J. Shi, Z. Zhang, G. Miao, H. Jiang and H. Song.(2023).AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties.Journal of Materials Chemistry C,11(23),7697-7704.
MLA Y. Chen, J. Shi, Z. Zhang, G. Miao, H. Jiang and H. Song."AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties".Journal of Materials Chemistry C 11.23(2023):7697-7704.

入库方式: OAI收割

来源:长春光学精密机械与物理研究所

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