Passivation on the surface or interface is one of the key issues in fabricating the efficient and stable perovskite solar cells (PSCs). In this Letter, we report a way to passivate the buried interface on the perovskite film by optimizing the growth kinetics of the precursor film. A  solvent-controlled growth (SCG) strategy of the precursor film is adopted, that is, inducing the solvent volatilization of the precursor film  before high-temperature annealing. It is found that the solvent distribution of the precursor film is the key to the growth kinetics of perovskite films. The vacuum pretreated precursor film can obtain a dense buried interface to avoid the generation of small grains and pores at the  interfaces of the perovskite/electron transport layer after high temperature crystallization. After passivation, non-radiative recombination in CsPbI2Br films is suppressed, accompanied by favorable carrier separation and extraction at the interface. The power conversion efficiency of  all-inorganic CsPbI2Br carbon-based PSCs without a hole transport layer reaches 13.46%. The SCG strategy on the precursor films provides  a way to passivate the buried interface of PSCs.