Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process
文献类型：期刊论文
| 作者 | Lei, Penghui8; Chang, Qing6,7; Xiao, Mingkun6,7; Ye, Chao6,7; Qi, Pan5; Shi, Fangjie4; Hang, Yuhua4; Li, Qianwu4; Peng Q(彭庆)1,2,3 |
| 刊名 | NANOMATERIALS
 |
| 出版日期 | 2024-10-01 |
| 卷号 | 14期号:20页码:11 |
| 关键词 | SiCf/TiC interface ion irradiation phase transformation interface cracking bubble |
| DOI | 10.3390/nano14201629 |
| 通讯作者 | Ye, Chao(yechao@nwpu.edu.cn) ; Peng, Qing(pengqing@imech.ac.cn) |
| 英文摘要 | A new type of SiCf/TiC-Ti3SiC2 composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 degrees C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiCf/TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing. |
| 分类号 | 二类 |
| WOS关键词 | M(N+1)AX(N) PHASES ; SIC FIBER ; TI3SIC2 ; STABILITY ; HELIUM |
| 资助项目 | National Key R&D Program of China ; National Natural Science Foundation of China[12272378] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB0620103] ; High-level Innovation Research Institute Program of Guangdong Province[2020B0909010003] ; [2022YFB3707200] |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001342594000001 |
| 资助机构 | National Key R&D Program of China ; National Natural Science Foundation of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; High-level Innovation Research Institute Program of Guangdong Province |
| 其他责任者 | Ye, Chao ; Peng, Qing |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/97142]  |
| 专题 | 力学研究所_非线性力学国家重点实验室 |
| 作者单位 | 1.Guangdong Aerosp Res Acad, Guangzhou 511458, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 3.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China; 4.Suzhou Nucl Power Res Inst, Suzhou 215004, Peoples R China; 5.China Nucl Power Operat Technol Corp Ltd, Wuhan 430223, Peoples R China; 6.Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China; 7.Northwestern Polytech Univ, Inst Clean Energy, Yangtze River Delta Res Inst, Taicang 215400, Peoples R China; 8.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Peoples R China; |
| 推荐引用方式 GB/T 7714 | Lei, Penghui,Chang, Qing,Xiao, Mingkun,et al. Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process[J]. NANOMATERIALS,2024,14(20):11. |
| APA | Lei, Penghui.,Chang, Qing.,Xiao, Mingkun.,Ye, Chao.,Qi, Pan.,...&彭庆.(2024).Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process.NANOMATERIALS,14(20),11. |
| MLA | Lei, Penghui,et al."Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process".NANOMATERIALS 14.20(2024):11. |
入库方式： OAI收割
来源：力学研究所
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