中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method

文献类型:期刊论文

作者Yan, Dongxiu3; Guo ZY(郭子漪)1,2; Chen X(陈雪)3; Li K(李凯)1,2; Zhao JF(赵建福)1,2; Hu WR(胡文瑞)1,2
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2025
卷号649页码:9
关键词Crystal growth Heat and mass flow Interfacial phenomenon Czochralski method Kriging-based response surface method
ISSN号0022-0248
DOI10.1016/j.jcrysgro.2024.127935
通讯作者Chen, Xue(chenxue@guet.edu.cn) ; Li, Kai(likai@imech.ac.cn)
英文摘要In this paper, a two-dimensional (2D) axisymmetric model subjected to the gas shear effect and thermal Marangoni effect is developed. It is highlighted that the growth conditions of pulling rate, gas flow rate, crucible, and crystal rotation rates play important roles in determining the crystal behaviors of interface morphology and oxygen transportation during the crystal growth process. A Kriging-based response surface method (RSM) is proposed to rapidly predict the crystal growth behaviors, indicating that the outputs of interface morphology and oxygen concentration can be predicted by the corresponding input growth conditions. By global sensitivity analysis, the pulling rate is identified as the key factor in determining the interface morphology, while gas flow rate and crucible rotation rate have a greater effect on oxygen transportation. Furthermore, these two inputs with the highest sensitivities are used to construct the response surface and predict unknown oxygen transportation. When compared with the numerical simulations, the presented model proves to be an effective tool for reducing measurement time and improving accuracy in predicting crystal behaviors. Our findings provide important insights into understanding the crystal growth process under different growth conditions and inspire a data-driven method for crystal growth prediction.
分类号Q3
WOS关键词CZOCHRALSKI ; OPTIMIZATION ; SIMULATION ; DESIGN ; MODEL ; SHAPE
资助项目National Key R & D Program of China[2022YFF0503500] ; National Natural Science Foundation of China[11972353] ; Young Elite Scientists Sponsorship Program by CAST[2021QNRC001]
WOS研究方向Crystallography ; Materials Science ; Physics
语种英语
WOS记录号WOS:001338625600001
资助机构National Key R & D Program of China ; National Natural Science Foundation of China ; Young Elite Scientists Sponsorship Program by CAST
其他责任者Chen, Xue ; Li, Kai
源URL[http://dspace.imech.ac.cn/handle/311007/97088]  
专题力学研究所_国家微重力实验室
作者单位1.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100149, Peoples R China
2.Chinese Acad Sci, Natl Micrograv Lab, Inst Mech, Beijing 100190, Peoples R China;
3.Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guilin 541004, Peoples R China;
推荐引用方式
GB/T 7714
Yan, Dongxiu,Guo ZY,Chen X,et al. Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method[J]. JOURNAL OF CRYSTAL GROWTH,2025,649:9.
APA Yan, Dongxiu,郭子漪,陈雪,李凯,赵建福,&胡文瑞.(2025).Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method.JOURNAL OF CRYSTAL GROWTH,649,9.
MLA Yan, Dongxiu,et al."Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method".JOURNAL OF CRYSTAL GROWTH 649(2025):9.

入库方式: OAI收割

来源:力学研究所

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