Damage microstructures in Ti3SiC2 under successive Xe-He-H ions irradiation and annealing process
文献类型：期刊论文
| 作者 | Chang, Qing; Peng Q(彭庆); Hao JN(郝剑楠); Qi, Pan; Lei, Penghui; Jiang, Ni; Ye, Chao |
| 刊名 | JOURNAL OF NUCLEAR MATERIALS
 |
| 出版日期 | 2024-10 |
| 卷号 | 599页码:155235 |
| 关键词 | Ti3SiC2 Ion irradiation Bubble Si-rich precipitate Nano-hardness |
| ISSN号 | 0022-3115 |
| DOI | 10.1016/j.jnucmat.2024.155235 |
| 英文摘要 | Ti3SiC2 is recognized as a promising candidate material for nuclear energy applications; however, the micro- structural defects resulting from complex irradiation processes remain elusive. This study investigates the microstructural evolution of Ti3SiC2 under sequential Xe-He-H ions irradiation at room temperature, followed by annealing at 900 degrees C, employing both experimental and first-principles computational approaches. A reverse phase transformation occurred following He irradiation, indicating that He facilitates the remote migration and recombination of Si vacancies through the formation of He-Si pairs during annealing. Post-annealing, the Xeirradiated sample exhibited a widespread distribution of small Xe bubbles, whereas larger bubbles were prevalent at peak damage regions in the samples subjected to Xe+He and Xe+He+H irradiation. Concurrently, Si-rich precipitates with distinct distribution patterns were observed in samples irradiated with Xe, Xe+He, and Xe+He+H ions, significantly affecting the hardness. First-principles calculations reveal that the distinct damage profiles are primarily attributed to the dynamic behaviors of Si interstitials. The Ti-Si bonds are relatively weak and easily broken, leading to abundant Si interstitials in Xe ion irradiation, and He enhances Si diffusion. Conversely, H enhances Si segregation by preventing He from capturing Si interstitials. Within the TiC grains, He promotes Si migration, causing an approximately 700-fold increase in Si diffusivity at 900 degrees C. The Si segregation leads to the nucleation of (110) dislocation loops, culminating in the formation of distinctive strip-like Si clusters. This study elucidates the formation mechanism of Si segregation within Ti3SiC2, providing valuable insights for the design of irradiation-resistant materials. |
| 分类号 | 一类 |
| WOS研究方向 | Materials Science ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:001346674500001 |
| 资助机构 | National Key R&D Program of China {2022YFB3707200] ; National Natural Science Foundation of China {12272378] ; National Science Fund for Distinguished Young Scholars of China {12205236] ; High-level Innovation Research Institute Program of Guangdong Province {2020B0909010003] ; LiYing Program of the Institute of Mechanics, Chinese Academy of Sciences {E1Z1011001] ; Innovation Capability Support Program of Shaanxi {2023-CX-TD-45, 2023KJXX-009] |
| 其他责任者 | Ye C |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/97180]  |
| 专题 | 力学研究所_非线性力学国家重点实验室 |
| 作者单位 | 1.【Lei, Penghui】 Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian, Peoples R China 2.【Qi, Pan】 China Nucl Power Operat Technol Corp CNPO Ltd, Wuhan 430223, Peoples R China 3.【Peng, Qing】 Guangdong Aerosp Res Acad, Guangzhou 511458, Peoples R China 4.【Peng, Qing】 Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 5.【Peng, Qing & Hao, Jiannan】 Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China 6.【Chang, Qing & Jiang, Ni & Ye, Chao】 Northwestern Polytech Univ, Sci & Technol Thermo Struct Composite Mat Lab, Xian 710072, Shaanxi, Peoples R China 7.【Chang, Qing & Jiang, Ni & Ye, Chao】 Northwestern Polytech Univ, Inst Clean Energy, Yangtze River Delta Res Inst, Taicang 215400, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chang, Qing,Peng Q,Hao JN,et al. Damage microstructures in Ti3SiC2 under successive Xe-He-H ions irradiation and annealing process[J]. JOURNAL OF NUCLEAR MATERIALS,2024,599:155235. |
| APA | Chang, Qing.,彭庆.,郝剑楠.,Qi, Pan.,Lei, Penghui.,...&Ye, Chao.(2024).Damage microstructures in Ti3SiC2 under successive Xe-He-H ions irradiation and annealing process.JOURNAL OF NUCLEAR MATERIALS,599,155235. |
| MLA | Chang, Qing,et al."Damage microstructures in Ti3SiC2 under successive Xe-He-H ions irradiation and annealing process".JOURNAL OF NUCLEAR MATERIALS 599(2024):155235. |
入库方式： OAI收割
来源：力学研究所
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