Suppressing Bulk and Interfacial Recombination Losses in Sn-Pb Perovskites for Efficient Printable Low-Bandgap Photovoltaic Devices
文献类型：期刊论文
| 作者 | Lai, Hongwei3; Hu, Jinlong2; Zhou, Xinming3; Cai, Linliang3; He, Qingchen3; Chen, Chaoran3; Xu, Zhenhua3; Xiao, Xiudi1 ; Lan, Donghui2; Mai, Yaohua3
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| 刊名 | SOLAR RRL
 |
| 出版日期 | 2022-08-24 |
| 页码 | 9 |
| 关键词 | narrow-bandgap passivation perovskites work functions 2D/3D heterojunctions |
| ISSN号 | 2367-198X |
| DOI | 10.1002/solr.202200619 |
| 通讯作者 | Lan, Donghui(donghuilan@hnu.edu.cn) ; Mai, Yaohua(yaohuamai@jnu.edu.cn) ; Guo, Fei(fei.guo@jnu.edu.cn) |
| 英文摘要 | Thin films of tin-lead alloyed perovskites are drawing growing attention, mainly owing to their tunable bandgaps in delivering efficient single- and multi-junction photovoltaic devices. The rapid efficiency advancement of Sn-Pb perovskite devices has been dependent primarily on improving the crystal quality of perovskite films via retarding oxidation of Sn2+. Herein, it is demonstrated that in addition to obtaining high-quality Sn-Pb perovskite thin films, reducing nonradiative recombination losses at interfaces is equally important for realizing efficient solar cells. An aromatic amine is first introduced to passivate the grain boundary in printed Sn-Pb perovskite films, which boosts the open-circuit voltage (V-OC) of the solar devices from 700 to 766 mV. Further enhancement of the V-OC to 814 mV and finally to 837 mV is realized by forming a 2D/3D-layered heterojunction and doping the hole extraction layer with a polyelectrolyte, respectively, benefiting from the largely suppressed nonradiative recombination losses at interfaces. Eventually, the mixed Sn-Pb perovskite devices with a bandgap of approximate to 1.27 eV yield a high efficiency of 19.06% and in parallel show improved shelf and light-soaking stability. |
| WOS关键词 | SOLAR-CELLS ; STABILITY ; GROWTH |
| 资助项目 | National Natural Science Foundation of China[62174069] ; National Natural Science Foundation of China[U21A20102] ; China Postdoctoral Science Foundation[2022M711340] ; Guangzhou Basic and Applied Basic Research Foundation[202102020566] ; Open Fund of the State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) ; Opening Project of the Key Laboratory of Materials Processing and Mold (Zhengzhou University) ; project of the Hunan Education Department[18B379] |
| WOS研究方向 | Energy & Fuels ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000843764100001 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| 资助机构 | National Natural Science Foundation of China ; China Postdoctoral Science Foundation ; Guangzhou Basic and Applied Basic Research Foundation ; Open Fund of the State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) ; Opening Project of the Key Laboratory of Materials Processing and Mold (Zhengzhou University) ; project of the Hunan Education Department |
| 源URL | [http://ir.giec.ac.cn/handle/344007/37132]  |
| 专题 | 中国科学院广州能源研究所 |
| 通讯作者 | Lan, Donghui; Mai, Yaohua; Guo, Fei |
| 作者单位 | 1.Chinese Acad Sci, Guangzhou Inst Energy Convers, CAS Key Lab Renewable Energy & Gas Hydrates, Guangzhou 510640, Peoples R China 2.Hunan Inst Engn, Hunan Prov Key Lab Environm Catalysis & Waste Rec, Coll Mat & Chem Engn, Xiangtan 411104, Peoples R China 3.Jinan Univ, Coll Informat Sci & Technol, Inst New Energy Technol, Guangzhou 510632, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lai, Hongwei,Hu, Jinlong,Zhou, Xinming,et al. Suppressing Bulk and Interfacial Recombination Losses in Sn-Pb Perovskites for Efficient Printable Low-Bandgap Photovoltaic Devices[J]. SOLAR RRL,2022:9. |
| APA | Lai, Hongwei.,Hu, Jinlong.,Zhou, Xinming.,Cai, Linliang.,He, Qingchen.,...&Guo, Fei.(2022).Suppressing Bulk and Interfacial Recombination Losses in Sn-Pb Perovskites for Efficient Printable Low-Bandgap Photovoltaic Devices.SOLAR RRL,9. |
| MLA | Lai, Hongwei,et al."Suppressing Bulk and Interfacial Recombination Losses in Sn-Pb Perovskites for Efficient Printable Low-Bandgap Photovoltaic Devices".SOLAR RRL (2022):9. |
入库方式： OAI收割
来源：广州能源研究所
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