Effect of high-temperature annealing on terahertz optoelectronic properties of nitrogen-doped polycrystalline diamond
文献类型：期刊论文
| 作者 | Liu, Kaichun4; Xiao, Huan4; Xu, Wen1,2,4 ; Cheng, Yanzhe3; Cheng, Xingjia1; Zhang, Jing1; Xiao, Yiming4; Ding, Lan4; Li, Haowen2
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| 刊名 | DIAMOND AND RELATED MATERIALS
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| 出版日期 | 2024-11-01 |
| 卷号 | 149 |
| 关键词 | Nitrogen-doped polycrystalline diamond Terahertz time-domain spectroscopy Optoelectronic properties |
| ISSN号 | 0925-9635 |
| DOI | 10.1016/j.diamond.2024.111543 |
| 通讯作者 | Xu, Wen(wenxu_issp@aliyun.com) ; Xiao, Yiming(yiming.xiao@ynu.edu.cn) |
| 英文摘要 | Nitrogen-doped polycrystalline diamond (N-PCD) is one of the most important carbon-based electronic materials. Here we present a systmatic investigation of the effect of high-temperature annealing (HTA) on basic physical properties of N-PCD wafer grown by microwave plasma-enhanced chemical vapor deposition (MPECVD). The metallographic and optical microscopes, X-ray diffraction,Raman spectroscopy and X-ray photoelectron spectroscopy are applied for the characterization of N-PCD before and after HTA. Particularly, we study the optoelectrnic properties of N-PCD before and after HTA by using terahertz (THz) time-domain spectroscopy. THz transmittance, dynamical and static dielectric constants and optical conductivity for N-PCD are measured. For NPCD before HTA, we can observe a THz absorption peak induced by weak H-bonds in N-PCD, which was predicted theoretically in 1999. For N-PCD after HTA, we find that the corresponding optical conductivity can be rightly descriped by the Drude-Lorentz formula. Thus, via fitting the experimental results with the theoretical formula, we can determine optically the key electronic parameters of N-PCD after HTA, such as the electron density, the electronic relaxation time and the Lorentz frequency. The temperature dependence of these parameters is examined in the range of 80-300 K. This work demondtrates that HTA is a practical and efficient way in improving the electronic and optoelectronic properties of N-PCD. The results obtained from this research can benefit an in-depth understanding of the effect of HTA on physical properties of N-PCD from a viewpoint of semiconductor physics. |
| WOS关键词 | SINGLE-CRYSTAL DIAMOND ; DIELECTRIC-CONSTANT ; 111 SURFACE ; RAMAN ; 1ST-ORDER |
| 资助项目 | National Natural Science foundation of China (NSFC)[U2230122] ; National Natural Science foundation of China (NSFC)[U2067207] ; National Natural Science foundation of China (NSFC)[12004331] ; Shenzhen Science and Technology Program[KQTD2 0190929173954826] ; Research Innovation Foundation for Graduate Students of Yunnan University[KC-23233799] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001313653000001 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | National Natural Science foundation of China (NSFC) ; Shenzhen Science and Technology Program ; Research Innovation Foundation for Graduate Students of Yunnan University |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/135245]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Xu, Wen; Xiao, Yiming |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, HFIPS, Hefei 230031, Peoples R China 2.Micro Opt Instruments Inc, Shenzhen 518118, Peoples R China 3.Chongqing Origin Crystal Sci & Technol Dev Co LTD, Chongqing 400030, Peoples R China 4.Yunnan Univ, Sch Phys & Astron, Kunming 650091, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Kaichun,Xiao, Huan,Xu, Wen,et al. Effect of high-temperature annealing on terahertz optoelectronic properties of nitrogen-doped polycrystalline diamond[J]. DIAMOND AND RELATED MATERIALS,2024,149. |
| APA | Liu, Kaichun.,Xiao, Huan.,Xu, Wen.,Cheng, Yanzhe.,Cheng, Xingjia.,...&Li, Haowen.(2024).Effect of high-temperature annealing on terahertz optoelectronic properties of nitrogen-doped polycrystalline diamond.DIAMOND AND RELATED MATERIALS,149. |
| MLA | Liu, Kaichun,et al."Effect of high-temperature annealing on terahertz optoelectronic properties of nitrogen-doped polycrystalline diamond".DIAMOND AND RELATED MATERIALS 149(2024). |
入库方式： OAI收割
来源：合肥物质科学研究院
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