Terahertz optoelectronic properties of synthetic single crystal diamond
文献类型：期刊论文
| 作者 | Xiao, Huan1,5; Zhang, Zongyan3; Xu, Wen1,5,6,7 ; Wang, Qiujing1,5; Xiao, Yiming1,5; Ding, Lan1,5; Huang, Jiangtao3; Li, Haowen6; He, Bin3; Peeters, Francois M.2,4,6
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| 刊名 | DIAMOND AND RELATED MATERIALS
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| 出版日期 | 2023-11-01 |
| 卷号 | 139 |
| 关键词 | Single crystal diamond Terahertz time-domain spectroscopy Optoelectronic properties |
| ISSN号 | 0925-9635 |
| DOI | 10.1016/j.diamond.2023.110266 |
| 通讯作者 | Xu, Wen(wenxu_issp@aliyun.com) ; Xiao, Yiming(yiming.xiao@ynu.edu.cn) ; He, Bin(hebin@sztu.edu.cn) |
| 英文摘要 | A systematic investigation is undertaken for studying the optoelectronic properties of single crystal diamond (SCD) grown by microwave plasma chemical vapor deposition (SCD). It is indicated that, without intentional doping and surface treatment during the sample growth, the terahertz (THz) optical conduction in SCD is mainly affected by surface H-terminations, -OH-, O- and N-based functional groups. By using THz time-domain spectroscopy (TDS), we measure the transmittance, the complex dielectric constant and optical conductivity sigma(omega) of SCD. We find that SCD does not show typical semiconductor characteristics in THz regime, where sigma(omega) cannot be described rightly by the conventional Drude formula. Via fitting the real and imaginary parts of sigma(omega) to the Drude-Smith formula, the ratio of the average carrier density to the effective electron mass gamma = n(e)/m*, the electronic relaxation time tau and the electronic backscattering or localization factor can be determined optically. The temperature dependence of these parameters is examined. From the temperature dependence of gamma, a metallic to semiconductor transition is observed at about T = 10 K. The temperature dependence of tau is mainly induced by electron coupling with acoustic-phonons and there is a significant effect of photon-induced electron backscattering or localization in SCD. This work demonstrates that THz TDS is a powerful technique in studying SCD which contains H-, N- and O-based bonds and has low electron density and high dc resistivity. The results obtained from this study can benefit us to gain an in-depth understanding of SCD and may provide new guidance for the application of SCD as electronic, optical and optoelectronic materials. |
| WOS关键词 | CVD-DIAMOND ; DIELECTRIC-PROPERTIES ; EMISSION PROPERTIES ; HIGH-QUALITY ; IMPURITIES ; TRANSITION |
| 资助项目 | National Natural Science foundation of China (NSFC)[U2230122] ; National Natural Science foundation of China (NSFC)[U2067207] ; National Natural Science foundation of China (NSFC)[12004331] ; Shenzhen Science and Technology Program[KQTD201909 29173954826] ; Shenzhen Science and Technology Program[20220716001753001] ; Shenzhen Science and Technology Program[SZWD2021015] ; University Engineering Research Center of Crystal Growth and Applications of Guangdong Province[2020GCZX005] ; SZTU School-Enterprise Cooperation Project[2021010802002] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001309171500001 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | National Natural Science foundation of China (NSFC) ; Shenzhen Science and Technology Program ; University Engineering Research Center of Crystal Growth and Applications of Guangdong Province ; SZTU School-Enterprise Cooperation Project |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/135275]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Xu, Wen; Xiao, Yiming; He, Bin |
| 作者单位 | 1.Yunnan Univ, Sch Phys & Astron, Kunming 650091, Yunnan, Peoples R China 2.Univ Fed Ceara, Dept Fis, Caixa Postal 6030, BR-60455760 Fortaleza, Ceara, Brazil 3.Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 515118, Peoples R China 4.Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium 5.Yunnan Univ, Yunnan Key Lab Quantum Informat, Kunming 650091, Yunnan, Peoples R China 6.Micro Opt Instruments Inc, Shenzhen 518118, Peoples R China 7.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, Huan,Zhang, Zongyan,Xu, Wen,et al. Terahertz optoelectronic properties of synthetic single crystal diamond[J]. DIAMOND AND RELATED MATERIALS,2023,139. |
| APA | Xiao, Huan.,Zhang, Zongyan.,Xu, Wen.,Wang, Qiujing.,Xiao, Yiming.,...&Peeters, Francois M..(2023).Terahertz optoelectronic properties of synthetic single crystal diamond.DIAMOND AND RELATED MATERIALS,139. |
| MLA | Xiao, Huan,et al."Terahertz optoelectronic properties of synthetic single crystal diamond".DIAMOND AND RELATED MATERIALS 139(2023). |
入库方式： OAI收割
来源：合肥物质科学研究院
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