Magnetic splitting induced ferromagnetism in chromium-doped HfSe2
文献类型：期刊论文
| 作者 | Ali, Hamid1,2; Iqbal, Obaid3,4; Alarfaji, Saleh S.5; Liu, Fengguang6; Hong, Bin6; Zhao, Weisheng6; Yue, Dewu1; Muhammad, Zahir6 |
| 刊名 | CHINESE JOURNAL OF PHYSICS
 |
| 出版日期 | 2024-12-01 |
| 卷号 | 92 |
| 关键词 | Magnetic splitting Ferromagnetism ARPES DFT |
| ISSN号 | 0577-9073 |
| DOI | 10.1016/j.cjph.2024.08.013 |
| 通讯作者 | Yue, Dewu(yuedewu@sziit.edu.cn) ; Muhammad, Zahir(zahir@mail.ustc.edu.cn) |
| 英文摘要 | Two-dimensional (2D) magnetic layered materials have gained significant interest in spintronic for memory storage devices. Herein, the electronic and magnetic properties of high-quality single crystals of chromium (Cr)-doped hafnium diselenide were studied. The electronic study indicated that the Cr-doped HfSe2 reveals the semiconducting nature with a proper bandgap as identified by angle-resolved photoemission spectroscopy and first-principle density functional theory (DFT) calculations. The magnetic results indicate that the HfSe exhibited ferromagnetic characteristics with the substitution of Cr atoms in a perpendicular direction. The Cr-doped HfSe2 sample shows a ferromagnetic phase below similar to 58 K, indicating the critical temperature (T-c) of magnetic order, while above this temperature, it shows a paramagnetic phase that can follow the Curie-Weiss Law. It can be seen that the magnetic moment is approximately 0.16 emu/g at 5 K, which further decreases with increasing temperature until 60 K and then transforms to a paramagnetic phase. The sample can clearly show a weak out-of-plane magnetic anisotropy with a coercivity of around 50.56 Oe and a saturation magnetization value of 0.029 emu/g. Convincingly, it was observed from the ARPES results that the valence band is split due to the spin-orbit interaction of Cr atoms, which can induce ferromagnetic order. At the same time, the temperature-dependent ARPES data shows that the splitting is higher below the T-c, while it is weaker above the T-c. The DFT results revealed that near the Fermi level, the spin-up and spin-down are spin-polarized with asymmetric trends. It can be observed that substituting Cr on the octahedral sites of Hf atoms influences the electron spin order created by Hf vacancies (as validated by the magnetic coupling measured by electron paramagnetic resonance spectroscopy experiments), which can change the magnetic alignment to induce the magnetism in HfSe2. This study highlights that doping transition metal in HfSe2 has promising potential for future applications, especially in memory devices and spintronic technologies. |
| WOS关键词 | ROOM-TEMPERATURE FERROMAGNETISM ; SEMICONDUCTOR ; GROWTH ; DEFECTS ; SNS2 ; MONOLAYER ; STRAIN ; FIELD |
| 资助项目 | National Natural Science Foundation of China[12104319] ; Anhui Province Key R & D Program International Cooperation Project[202104b11020012] ; King Khalid University, Saudi Arabia[RGP-2/538/45] ; King Khalid University, Saudi Arabia[11400-2023-020202-02] ; King Khalid University, Saudi Arabia[11400-2023-020201-18] ; King Khalid University, Saudi Arabia[HX-0594] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001317338400001 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natural Science Foundation of China ; Anhui Province Key R & D Program International Cooperation Project ; King Khalid University, Saudi Arabia |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/135458]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Yue, Dewu; Muhammad, Zahir |
| 作者单位 | 1.Shenzhen Inst Informat Technol, Informat Technol Res Inst, Shenzhen 518172, Peoples R China 2.Univ Elect Sci & Technol China, Sch Resources & Environm, Shensi Lab, Chengdu, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China 4.Chinese Acad Sci, Hefei Inst Phys Sci, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China 5.King Khalid Univ, Fac Sci, Dept Chem, POB 9004, Abha 61413, Saudi Arabia 6.Beihang Univ, Hefei Innovat Res Inst, Sch Integrated Circuit Sci & Engn, Hefei 230013, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ali, Hamid,Iqbal, Obaid,Alarfaji, Saleh S.,et al. Magnetic splitting induced ferromagnetism in chromium-doped HfSe2[J]. CHINESE JOURNAL OF PHYSICS,2024,92. |
| APA | Ali, Hamid.,Iqbal, Obaid.,Alarfaji, Saleh S..,Liu, Fengguang.,Hong, Bin.,...&Muhammad, Zahir.(2024).Magnetic splitting induced ferromagnetism in chromium-doped HfSe2.CHINESE JOURNAL OF PHYSICS,92. |
| MLA | Ali, Hamid,et al."Magnetic splitting induced ferromagnetism in chromium-doped HfSe2".CHINESE JOURNAL OF PHYSICS 92(2024). |
入库方式： OAI收割
来源：合肥物质科学研究院
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