Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals
文献类型:期刊论文
作者 | Gong, Yaru5; Dou, Wei5; Lu, Bochen1; Zhang, Xuemei2; Zhu, He5; Ying, Pan5; Zhang, Qingtang5; Liu, Yuqi5; Li, Yanan5![]() |
刊名 | NATURE COMMUNICATIONS
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出版日期 | 2024-05-18 |
卷号 | 15 |
DOI | 10.1038/s41467-024-48635-0 |
通讯作者 | Zhang, Yongsheng(yshzhang@theory.issp.ac.cn) ; Wu, Haijun(wuhaijunnavy@xjtu.edu.cn) ; Tang, Guodong(tangguodong@njust.edu.cn) |
英文摘要 | N-type polycrystalline SnSe is considered as a highly promising candidates for thermoelectric applications due to facile processing, machinability, and scalability. However, existing efforts do not enable a peak ZT value exceeding 2.0 in n-type polycrystalline SnSe. Here, we realized a significant ZT enhancement by leveraging the synergistic effects of divacancy defect and introducing resonance level into the conduction band. The resonance level and increased density of states resulting from tungsten boost the Seebeck coefficient. The combination of the enhanced electrical conductivity (achieved by increasing carrier concentration through WCl6 doping and Se vacancies) and large Seebeck coefficient lead to a high power factor. Microstructural analyses reveal that the co-existence of divacancy defects (Se vacancies and Sn vacancies) and endotaxial W- and Cl-rich nanoprecipitates scatter phonons effectively, resulting in ultralow lattice conductivity. Ultimately, a record-high peak ZT of 2.2 at 773 K is achieved in n-type SnSe0.92 + 0.03WCl(6). |
WOS关键词 | ULTRALOW THERMAL-CONDUCTIVITY ; BAND-STRUCTURE ; FIGURE ; MERIT ; ENHANCEMENT ; GETE ; SNTE ; ESCA |
资助项目 | National Natural Science Foundation of China[52071182] ; National Natural Science Foundation of China[52172128] ; The Qinglan Project of the Young and Middle-aged Academic Leader of Jiangsu Province ; Fundamental Research Funds for the Central Universities[30921011107] ; Postgraduate Research & Practice Innovation Program of Jiangsu Province[KYCX23_0457] ; National Key R&D Program of China[2021YFB3201100] ; Distinguished Expert of Taishan Scholar[tstp20221124] |
WOS研究方向 | Science & Technology - Other Topics |
语种 | 英语 |
WOS记录号 | WOS:001227431300033 |
出版者 | NATURE PORTFOLIO |
资助机构 | National Natural Science Foundation of China ; The Qinglan Project of the Young and Middle-aged Academic Leader of Jiangsu Province ; Fundamental Research Funds for the Central Universities ; Postgraduate Research & Practice Innovation Program of Jiangsu Province ; National Key R&D Program of China ; Distinguished Expert of Taishan Scholar |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/136163] ![]() |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Zhang, Yongsheng; Wu, Haijun; Tang, Guodong |
作者单位 | 1.Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian, Peoples R China 2.Ningxia Normal Univ, Engn Res Ctr Nanostruct & Funct Mat, Sch Phys & Elect Informat Engn, Guyuan, Ningxia, Peoples R China 3.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei, Peoples R China 4.Qufu Normal Univ, Adv Res Inst Multidisciplinary Sci, Qufu, Shandong, Peoples R China 5.Nanjing Univ Sci & Technol, Engn Res Ctr Mat Behav & Design, Natl Key Lab Adv Casting Technol, MIIT Key Lab Adv Met & Intermet Mat Technol,Minist, Nanjing, Peoples R China |
推荐引用方式 GB/T 7714 | Gong, Yaru,Dou, Wei,Lu, Bochen,et al. Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals[J]. NATURE COMMUNICATIONS,2024,15. |
APA | Gong, Yaru.,Dou, Wei.,Lu, Bochen.,Zhang, Xuemei.,Zhu, He.,...&Tang, Guodong.(2024).Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals.NATURE COMMUNICATIONS,15. |
MLA | Gong, Yaru,et al."Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals".NATURE COMMUNICATIONS 15(2024). |
入库方式: OAI收割
来源:合肥物质科学研究院
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