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Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets

文献类型：期刊论文

作者Niu, Ziyu2; Yu, Xiang -Long4,5; Shao, Dingfu1; Jing, Xixiang2; Hou, Defeng2; Li, Xuhong2; Sun, Jing2; Shi, Junqin2,3; Fan, Xiaoli2,3; Cao, Tengfei2,3
刊名PHYSICAL REVIEW B
出版日期2024-05-02
卷号109
ISSN号2469-9950
DOI10.1103/PhysRevB.109.174405
通讯作者Fan, Xiaoli(xlfan@nwpu.edu.cn) ; Cao, Tengfei(tengfei.cao@nwpu.edu.cn)
英文摘要Van der Waals (vdW) assembly could efficiently modulate the symmetry of two-dimensional (2D) materials that ultimately governs their physical properties. Of particular interest is the ferroelectric polarization being introduced by proper vdW assembly that enables the realization of novel electronic, magnetic, and transport properties of 2D materials. Four-layer bulklike stacking antiferromagnetic MnBi2Te4 (FB-MBT) offers an excellent platform to explore ferroelectric polarization effects on magnetic order and topological transport properties of nanomaterials. Here, by applying symmetry analyses and density-functional-theory calculations, the ferroelectric interface effects on magnetic order, anomalous Hall effect (AHE) or even quantum AHE (QAHE) on the FB-MBT are analyzed. Interlayer ferroelectric polarization in FB-MBT efficiently violates the PT symmetry [the combination of central inversion (P) and time reverse ( T) symmetry] of the FB-MBT by conferring magnetoelectric couplings, and stabilizes a specific antiferromagnetic order encompassing a ferromagnetic interface in the FB-MBT. We predict that engineering an interlayer polarization in the top or bottom interface of FB-MBT allows converting FB-MBT from a trivial insulator to a Chern insulator. The switching of ferroelectric polarization at the middle interfaces results in a direction reversal of the quantum anomalous Hall current. Additionally, the interlayer polarization of the top and bottom interfaces can be aligned in the same direction, and the switching of polarization direction also reverses the direction of anomalous Hall currents. Overall, our work highlights the occurrence of quantum-transport phenomena in 2D vdW four-layer antiferromagnets through vdW assembly. These phenomena are absent in the bulk or thin-film in bulklike stacking forms of MnBi2Te4.
WOS关键词SUPERCONDUCTIVITY
资助项目Fundamental Research Funds for the Central Universities[G2023KY05102] ; Natural Science Basic Research Program of Shaanxi[2024JC-YBMS-009] ; Science and Technology on Reactor System Design Technology Laboratory ; Youth Project of Shanxi High-level Talents Introduction Plan
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:001241256800006
出版者AMER PHYSICAL SOC
资助机构Fundamental Research Funds for the Central Universities ; Natural Science Basic Research Program of Shaanxi ; Science and Technology on Reactor System Design Technology Laboratory ; Youth Project of Shanxi High-level Talents Introduction Plan
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/136412]  
专题中国科学院合肥物质科学研究院
通讯作者Fan, Xiaoli; Cao, Tengfei
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
2.Northwestern Polytech Univ, Res Ctr Adv Lubricat & Sealing Mat, Sch Mat Sci & Engn, Xian 710072, Shaanxi, Peoples R China
3.Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
5.Int Quantum Acad, Shenzhen 518048, Peoples R China
推荐引用方式
GB/T 7714		 Niu, Ziyu,Yu, Xiang -Long,Shao, Dingfu,et al. Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets[J]. PHYSICAL REVIEW B,2024,109.
APA Niu, Ziyu.,Yu, Xiang -Long.,Shao, Dingfu.,Jing, Xixiang.,Hou, Defeng.,...&Cao, Tengfei.(2024).Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets.PHYSICAL REVIEW B,109.
MLA Niu, Ziyu,et al."Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets".PHYSICAL REVIEW B 109(2024).

入库方式： OAI收割

来源：合肥物质科学研究院

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