Modified graphene by 1 MeV electron irradiation in betavoltaic cell
文献类型:期刊论文
作者 | Wang, Xiaoyu1,2; Feng, Jiaming1; He, Houjun2; Han, Yuncheng2 |
刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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出版日期 | 2024-09-01 |
卷号 | 554 |
关键词 | Graphene Electron irradiation Modified Betavoltaic cell Performance |
ISSN号 | 0168-583X |
DOI | 10.1016/j.nimb.2024.165410 |
通讯作者 | Wang, Xiaoyu(wangxy@inest.cas.cn) ; Han, Yuncheng(yuncheng.han@inest.cas.cn) |
英文摘要 | A facile approach for graphene modification based on 1 MeV electron irradiation is proposed here to produce a graphene/Si betavoltaic cell. Compared to the unirradiated graphene, graphene-modified under the dose rate of 5 kGy/pass (with accumulated doses of 10 kGy) and 10 kGy/pass (with accumulated doses of 20 kGy) electron irradiation, the output power density of graphene/Si betavoltaic cells were increased by 2 and 3 times, respectively. The effect of different dose rates (5-20 kGy/pass) and accumulated irradiation doses (0-40 kGy) electron irradiation on the doping, elemental morphology, and the magnitude of induced defects of graphene were further studied. The material characterization techniques demonstrated that different dose rates and accumulated doses of electron irradiation can introduce varying degrees of partial defects in graphene, resulting in different regulations of doping and control band gaps of graphene. Concurrently, the results of XPS and Raman spectroscopy revealed that the sp2 hybrids of graphene can be converted into sp3 hybrids by appropriate electron irradiation and has light N-type doping characteristics. Thus, the irradiated graphene/Si betavoltaic cells can maintain higher open circuit voltage. Therefore, the graphene-modified by appropriate electron irradiation provides a facile strategy to improve the output performance of graphene/Si betavoltaic cells. |
资助项目 | National Natural Science Foundation of China[12305382] ; Hubei Provincial Natural Science Foundation[2022CFB575] ; PhD research startup foundation of Hubei University of Science and Technology[BK202219] |
WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
语种 | 英语 |
WOS记录号 | WOS:001251687600001 |
出版者 | ELSEVIER |
资助机构 | National Natural Science Foundation of China ; Hubei Provincial Natural Science Foundation ; PhD research startup foundation of Hubei University of Science and Technology |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/136536] ![]() |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Wang, Xiaoyu; Han, Yuncheng |
作者单位 | 1.Hubei Univ Sci & Technol, Sch Nucl Technol & Chem & Biol, Hubei Key Lab Radiat Chem & Funct Mat, Xianning 437100, Hubei, Peoples R China 2.Chinese Acad Sci, Inst Nucl Energy Safety Technol, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Xiaoyu,Feng, Jiaming,He, Houjun,et al. Modified graphene by 1 MeV electron irradiation in betavoltaic cell[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2024,554. |
APA | Wang, Xiaoyu,Feng, Jiaming,He, Houjun,&Han, Yuncheng.(2024).Modified graphene by 1 MeV electron irradiation in betavoltaic cell.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,554. |
MLA | Wang, Xiaoyu,et al."Modified graphene by 1 MeV electron irradiation in betavoltaic cell".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 554(2024). |
入库方式: OAI收割
来源:合肥物质科学研究院
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