Electronic instability in pressured black phosphorus under strong magnetic field
文献类型：期刊论文
| 作者 | Wang, Zhong-Yi1,3; Liu, Da-Yong2 ; Zou, Liang-Jian1,3
|
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2024-10-02 |
| 卷号 | 36 |
| 关键词 | black phosphorous charge density wave excitonic insulator strong magnetic field quantum limit |
| ISSN号 | 0953-8984 |
| DOI | 10.1088/1361-648X/ad5ad4 |
| 通讯作者 | Zou, Liang-Jian(zou@theory.issp.ac.cn) |
| 英文摘要 | In this paper, we have systematically studied the electronic instability of pressured black phosphorous (BP) under strong magnetic field. We first present an effective model Hamiltonian for pressured BP near the Lifshitz point. Then we show that when the magnetic field exceeds a critical value, the nodal-line semimetal (NLSM) state of BP with a small band overlap re-enters the semiconductive phase by re-opening a small gap. This results in a narrow-bandgap semiconductor with a partially flat valence band edge. Moreover, we demonstrate that above this critical magnetic field, two possible instabilities, i.e. charge density wave phase and excitonic insulator (EI) phase, are predicted as the ground state for high and low doping concentrations, respectively. By comparing our results with the experiment (Sun et al 2018 Sci. Bull. 63 1539), we suggest that the field-induced instability observed experimentally corresponds to an EI. Furthermore, we propose that the semimetallic BP under pressure with small band overlaps may provide a good platform to study the magneto-exciton insulators. Our findings bring the first insight into the electronic instability of topological NLSM in the quantum limit. |
| WOS关键词 | EXCITONIC INSULATOR ; PHASE-TRANSITION ; GAS ; MAGNETORESISTANCE ; GRAPHITE ; STATES |
| 资助项目 | National Natural Science Foundation of China[11974354] ; National Natural Science Foundation of China[11774350] ; National Natural Science Foundation of China[11534010] ; Program of Chinese Academy of Sciences, Science Challenge Project[TZ2016001] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001261085100001 |
| 出版者 | IOP Publishing Ltd |
| 资助机构 | National Natural Science Foundation of China ; Program of Chinese Academy of Sciences, Science Challenge Project |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/136695]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Zou, Liang-Jian |
| 作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, POB 1129, Hefei 230031, Peoples R China 2.Nantong Univ, Sch Phys & Technol, Dept Phys, Nantong 226019, Peoples R China 3.Univ Sci & Technol China, Sci Isl Branch, Grad Sch, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Zhong-Yi,Liu, Da-Yong,Zou, Liang-Jian. Electronic instability in pressured black phosphorus under strong magnetic field[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2024,36. |
| APA | Wang, Zhong-Yi,Liu, Da-Yong,&Zou, Liang-Jian.(2024).Electronic instability in pressured black phosphorus under strong magnetic field.JOURNAL OF PHYSICS-CONDENSED MATTER,36. |
| MLA | Wang, Zhong-Yi,et al."Electronic instability in pressured black phosphorus under strong magnetic field".JOURNAL OF PHYSICS-CONDENSED MATTER 36(2024). |
入库方式： OAI收割
来源：合肥物质科学研究院
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