Superconductivity of VSe2 under pressure and charge doping: Suppressed charge density wave
文献类型：期刊论文
| 作者 | Fu, Xin-Peng2,3,4; Fu, Zhen-Guo2,3; Mo, Chong-Jie5; Wang, Bao-Tian6; Liu, Peng-Fei6; Zhao, Guo-Jun7; Hao, Ning8; Zhang, Ping1,2,3 |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2024-07-01 |
| 卷号 | 110 |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/PhysRevB.110.014501 |
| 通讯作者 | Fu, Zhen-Guo(fu_zhenguo@iapcm.ac.cn) |
| 英文摘要 | By employing the first -principles calculations, the influence mechanism of external pressure and charge doping on the electron -phonon coupling (EPC) and superconductivity (SC) of bulk VSe 2 is investigated. Our calculations reveal that with increasing pressure the charge density wave (CDW) of 1T-VSe 2 is gradually suppressed, and a SC state subsequently emerges which is accompanied by a structural phase transition from the trigonal phase to a monoclinic phase at 15 . 5 GPa. Increasing pressure from 15.5 to 35 GPa, the SC transition temperature T c of VSe 2 slightly increases from 4.2 to 5 . 2 K and no SC dome is found, which are in good agreement with the previous experimental results [S. Sahoo et al. , Phys. Rev. B 101 , 014514 (2020)]. Through electron- or hole -doping (denoted by n e and n h ), the CDW order of the trigonal phase can be suppressed and SC states with T c greater than 10.5 and 9 . 0 K, respectively, emerge. The highest T c under charge doping can be up to about 12 K, and a weak double -dome like dependence of T c on n e and n h is found. Combining systematical analysis of effects of pressure and charge doping, we demonstrate that the Kohn anomalies of phonons at certain Q points associated with the in -plane vibrations of V atoms play key roles in strengthening the EPC, which brings about the intriguing SC in VSe 2 . However, due to the weak pressure -induced modifications of phonon spectrum as well as Fermi surface (FS), the changes of EPC and T c caused by pressure are not significant. Interestingly, charge doping will produce a local flat band along P A direction near the FS, which is mainly contributed by V 3 d -orbitals, and result in large values of electronic density of states at Fermi level. Therefore, the effects caused by charge doping to the electronic structures, phonon anomalies, EPC, and T c are evident. Our findings may provide a promising understanding to the pressure and doping -dependent SC of VSe 2 , and may be valuable for designing new materials with enhanced SC through the strategic manipulation of electronic and phononic properties. |
| WOS关键词 | TRANSITION-TEMPERATURE ; TRANSPORT-PROPERTIES ; STATE |
| 资助项目 | National Natural Science Foundation of China[12175023] ; National Natural Science Foundation of China[12375234] ; National Natural Science Foundation of China[92265104] ; National Natural Science Foundation of China[12022413] ; National Natural Science Foundation of China[11674331] ; National Natural Science Foundation of China[12104458] ; National Natural Science Foundation of China[12264032] ; National Key R&D Program of China[2022YFA1403200] ; Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures[JZHKYPT-2021-08] ; CASHIPS Director's Fund[BJPY2023A09] ; Strategic Priority Research Program (B) of the Chinese Academy of Sciences[XDB33030100] ; Major Basic Program of Natural Science Foundation of Shandong Province[ZR2021ZD01] ; High Magnetic Field Laboratory of Anhui Province, China |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:001263210800006 |
| 出版者 | AMER PHYSICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; National Key R&D Program of China ; Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures ; CASHIPS Director's Fund ; Strategic Priority Research Program (B) of the Chinese Academy of Sciences ; Major Basic Program of Natural Science Foundation of Shandong Province ; High Magnetic Field Laboratory of Anhui Province, China |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/136962]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Fu, Zhen-Guo |
| 作者单位 | 1.Qufu Normal Univ, Sch Phys & Phys Engn, Qufu 273165, Peoples R China 2.Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China 3.Natl Key Lab Computat Phys, Beijing 100088, Peoples R China 4.China Acad Engn Phys, Grad Sch, Beijing 100088, Peoples R China 5.Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China 6.Spallat Neutron Source Sci Ctr, Dongguan 523803, Peoples R China 7.Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China 8.Chinese Acad Sci, Anhui Prov Key Lab Low Energy Quantum Mat & Device, High Magnet Field Lab, HFIPS, Hefei 230031, Anhui, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fu, Xin-Peng,Fu, Zhen-Guo,Mo, Chong-Jie,et al. Superconductivity of VSe2 under pressure and charge doping: Suppressed charge density wave[J]. PHYSICAL REVIEW B,2024,110. |
| APA | Fu, Xin-Peng.,Fu, Zhen-Guo.,Mo, Chong-Jie.,Wang, Bao-Tian.,Liu, Peng-Fei.,...&Zhang, Ping.(2024).Superconductivity of VSe2 under pressure and charge doping: Suppressed charge density wave.PHYSICAL REVIEW B,110. |
| MLA | Fu, Xin-Peng,et al."Superconductivity of VSe2 under pressure and charge doping: Suppressed charge density wave".PHYSICAL REVIEW B 110(2024). |
入库方式： OAI收割
来源：合肥物质科学研究院
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